Low-Pressure Metallorganic Chemical Vapor Deposition of Fe[sub 2]O[sub 3] Thin Films on Si(100) Using n-Butylferrocene and Oxygen

Singh, Manish Kumar; Yang, Yi; Takoudis, Christos G.

doi:10.1149/1.2952812

Cited by 21 publications

(29 citation statements)

References 44 publications

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“…Recently, we reported the first use of n-butylferrocene as an MOCVD liquid precursor for depositing iron-oxide films. 11 N-Butylferrocene was shown to be an air-and moisture-stable liquid precursor with good thermal stability and sufficiently high vapor pressure for use in MOCVD. In the present study, we report the electrical and magnetic properties of the MOCVD BFO thin films deposited using this liquid iron precursor.…”

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confidence: 99%

Metallorganic Chemical-Vapor-Deposited BiFeO[sub 3] Films for Tunable High-Frequency Devices

Singh¹,

Yang²,

Takoudis

et al. 2009

Electrochem. Solid-State Lett.

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We report the first use of a room-temperature liquid iron precursor, n-butylferrocene, to deposit polycrystalline BiFeO 3 films by metallorganic chemical vapor deposition. From X-ray photoelectron spectroscopy, the Bi/Fe atomic ratio is observed to be ϳ1. Electrical measurements show that the films exhibit ferroelectric characteristics at room temperature with negligible charge leakage. Magnetic measurements reveal a room-temperature saturation magnetization of ϳ8 emu/cm 3 and provide evidence for a possible spin reorientation transition near 140 K. Data on magnetic-field dependence of dielectric constant at 18 GHz provide evidence for magnetic-ferroelectric coupling in the film, indicating potential for application in high-frequency tunable devices.Single-phase multiferroic materials, particularly BiFeO 3 , have been the focus of a renewed interest in recent years. Bismuth ferrite ͑BiFeO 3 ͒ is multiferroic, having a high ferroelectric Curie temperature and developing spiral-antiferromagnetic order below 643 K. It is unique because BiFeO 3 ͑BFO͒ is the only known single-phase material that is multiferroic at room temperature. Therefore, it has enormous potential for applications in spintronic devices, nonvolatile ferroelectric random access memory, microwave technology, sensors, and microactuators. 1 Thin BFO films have drawn special attention with regards to the potential integration of BFO into the semiconductor technology and also because they have been demonstrated to exhibit a large polarization that is an order of magnitude higher than the bulk form. 2 Recently, enhanced magnetization behavior has been reported for BiFeO 3 thin films, though the reasons for such enhancements are still not fully understood and are still debated. 3,4 Among the various preparation techniques, pulsed laser deposition ͑PLD͒ and chemical solution deposition ͑CSD͒ have been the main reported methods used for fabricating BFO films. There have been few reports on using metallorganic chemical vapor deposition ͑MOCVD͒ for depositing BFO films. 2,5-8 MOCVD is arguably one of the most suitable techniques for depositing such complex oxide structures for fabrication of devices at a commercially viable scale. These films can be deposited over large areas with advantages of good composition control, conformal step coverages, and high uniformities, as are required for making devices. However, the applicability of MOCVD is highly dependent on the availability of suitable precursors, which should have a stable and reproducible highenough vapor pressure, should not decompose during delivery to the deposition chamber, and should not be hazardous. 9 Gas/liquid precursors are preferred over solid precursors because of the easier and reproducible control of their flow rates and their higher volatilities in general. 10 The unavailability of suitable liquid precursors has been the major reason for so few reports on MOCVD of BiFeO 3 . The commercially available iron precursors that have been used for the MOCVD of BiFeO 3 are iron͑III͒ tris͑2,2,6,6-te...

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confidence: 99%

Metallorganic Chemical-Vapor-Deposited BiFeO[sub 3] Films for Tunable High-Frequency Devices

Singh¹,

Yang²,

Takoudis

et al. 2009

Electrochem. Solid-State Lett.

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“…The thermal decomposition behavior of (C 4 H 9 C 5 H 4 )Fe(Cp) is very similar to that of ferrocene. It evaporates in a single step in the range 50-240 • C, leaving behind only 2% residue [69]. This indicates a clean evaporation without any decomposition.…”

Section: Precursorsmentioning

confidence: 93%

Synthesis of multifunctional multiferroic materials from metalorganics

Singh

Yang

Takoudis

2009

Coordination Chemistry Reviews

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“…This result is the same as our earlier research on Fe 2 O 3 thin films. 7 In the case of Ni 2p core region, the δ eV between Ni 2p 3/2 and Ni 2p 1/2 peaks is 18.3 eV, which corresponds to NiO. For further analysis of the 2p 3/2 , a peak fitting procedure was used to identify different oxidation states.…”

Section: Figmentioning

confidence: 99%

Chemical Vapor Deposition of Nickel Ferrite Using Ni C5H5 2 and Fe C5H4C4H9 C5H5

Walker

Singh

Yang

et al. 2010

J Undergrad Research UIC

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Chemical vapor deposition was used to deposit thin films of nickel oxide (NiO) and iron oxide (Fe2O3) on silicon substrates. Precursors chosen for this process were nickelocene, Ni(C5H5)2 and n-butylferrocene, Fe(C5H4C4H9)(C5H5), which were oxidized with oxygen gas in a low-pressure chemical vapor deposition system. Following the deposition of the individual metal oxides, the two precursors were used together with the goal of depositing a thin film of nickel ferrite (NiFe2O4). Both co-deposition and cyclic deposition were carried out, and the resulting thin films were analyzed using x-ray photoelectron spectroscopy. This study found that the resulting thin films did not contain NiFe2O4, but were composed of NiO and Fe2O3 in a different ratio. It is suggested that changing various parameters in this experiment can be used to vary this ratio.

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Low-Pressure Metallorganic Chemical Vapor Deposition of Fe[sub 2]O[sub 3] Thin Films on Si(100) Using n-Butylferrocene and Oxygen

Cited by 21 publications

References 44 publications

Metallorganic Chemical-Vapor-Deposited BiFeO[sub 3] Films for Tunable High-Frequency Devices

Metallorganic Chemical-Vapor-Deposited BiFeO[sub 3] Films for Tunable High-Frequency Devices

Synthesis of multifunctional multiferroic materials from metalorganics

Chemical Vapor Deposition of Nickel Ferrite Using Ni C5H5 2 and Fe C5H4C4H9 C5H5

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