2018
DOI: 10.7567/jjap.57.085501
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Low-pressure N2 microplasma treatment for substrate surface cleaning prior to GaN selective growth

Abstract: Low-pressure microplasma treatment was performed to clean a substrate surface prior to the selective growth of GaN by chemical beam epitaxy. To investigate the cleaning mechanism, the process pressure and process time were systematically varied. The plasma distribution was also studied using a special sheet, whose color changes following the irradiation of plasma species. Consequently, it was found that the range of microplasma irradiation increased with decreasing process pressure, and simultaneously, the mor… Show more

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