In this article, a dual port T-stub based planar sensor is designed with defective ground structure to analyze the properties of lossless dielectric material. The observation is done on the basis of reflection response i.e., S11 and also by analyzing imaginary part (reactive part) of z-parameters (Z11, Z21). This proposed sensor is applicable to sense the relative permittivity in the given range i.e., ϵr =1-12. In this study, the capacitive response of the sensor is analyzed with varying relative permittivity of material under test (MUT). It is found that with increase in the relative permittivity of MUT, the capacitance of the sensor increases and therefore significant shift in frequency is observed.