Low propagation loss silicon-on-sapphire waveguides for the mid-infrared

Li, Fangxin; Jackson, Stuart D.; Grillet, Christian; Mägi, Eric; Hudson, Darren D.; Madden, Steve; Moghe, Y.; O’Brien, Christopher; Read, A. M.; Duvall, Steven G.; Atanackovic, Peter; Eggleton, Benjamin J.; Moss, David

doi:10.1364/oe.19.015212

Cited by 142 publications

(68 citation statements)

References 17 publications

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“…Table 1 shows the available passive platforms for mid-IR integrated photonics on Si, including the best reported results on low loss performance obtained in each category. Although silicon-on-sapphire (SOS) [44][45][46][47][48][49][50][51] is not formed on a Si substrate, it is widely adopted for mid-IR photonics and is also included for comparison.…”

Section: Waveguides and Passive Devicesmentioning

confidence: 99%

Mid-infrared integrated photonics on silicon: a perspective

et al. 2017

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Abstract:The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2-20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

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Section: Waveguides and Passive Devicesmentioning

confidence: 99%

Mid-infrared integrated photonics on silicon: a perspective

et al. 2017

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“…As sapphire is transparent up to ~5.5 μm, silicon-on-sapphire (SOS) waveguiding at 3.4, 4.4, 5.08, and 5.5 μm has been reported in the last three years [8][9][10][11]. Propagation losses of 3.6 dB/cm at 3.4 μm, 4.3 dB/cm at 4.5 μm, 1.9 dB/cm at 5.08 μm, and 4 dB/cm at 5.5 μm for SOS waveguides have been achieved.…”

Section: Introductionmentioning

confidence: 99%

Silicon photonic devices and platforms for the mid-infrared

Nedeljkovic¹,

Khokhar²,

Hu³

et al. 2013

Opt. Mater. Express

118

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Due to its excellent electronic and photonic properties, silicon is a good candidate for mid-infrared optoelectronic devices and systems that can be used in a host of applications. In this paper we review some of the results reported recently, and we also present several new results on midinfrared photonic devices including Mach-Zehnder interferometers, multimode interference splitters and multiplexers based on silicon-oninsulator, polysilicon, suspended silicon, and slot waveguide platforms.

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“…In particular, part of the mid-IR region (8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20) µm) is often referred to as the "fingerprint region", since many molecules have uniquely identifiable absorption spectra within this wavelength range. Additionally, the mid-IR wavelength region is well-suited for thermal imaging and free-space communications, especially within the atmospheric windows of 3-5 µm and 8-11 µm.…”

Section: Introductionmentioning

confidence: 99%

“…Researchers at the University of Washington demonstrated the first SOS waveguides operational at 4.5 µm in 2010 [13], and subsequently demonstrated ring resonators operational at 5.5 µm [14]. SOS waveguides operating at 2.75 µm [15] and 5.18 µm [16], ring resonators operating at 2.75 µm [17], and grating couplers operating at 2.75 µm [15,17] have also been demonstrated. Recently, our group has demonstrated high-quality (Q) factor grating-coupled microring resonators operational at 4.3-4.6 µm, with intrinsic Q-factors of over 200,000 [18].…”

Section: Introductionmentioning

confidence: 99%

Silicon photonic devices for mid-infrared applications

Shankar

Lončar

2014

Nanophotonics

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Abstract:The mid-infrared (IR) wavelength region (2-20 µm) is of great interest for a number of applications, including trace gas sensing, thermal imaging, and freespace communications. Recently, there has been significant progress in developing a mid-IR photonics platform in Si, which is highly transparent in the mid-IR, due to the ease of fabrication and CMOS compatibility provided by the Si platform. Here, we discuss our group's recent contributions to the field of silicon-based mid-IR photonics, including photonic crystal cavities in a Si membrane platform and grating-coupled high-quality factor ring resonators in a silicon-on-sapphire (SOS) platform. Since experimental characterization of microphotonic devices is especially challenging at the mid-IR, we also review our mid-IR characterization techniques in some detail. Additionally, pre-and post-processing techniques for improving device performance, such as resist reflow, Piranha clean/HF dip cycling, and annealing are discussed.

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Low propagation loss silicon-on-sapphire waveguides for the mid-infrared

Abstract: Abstract:We report record low loss silicon-on-sapphire nanowires for applications to mid infrared optics. We achieve propagation losses as low as 0.8dB/cm at =1550nm,  1.1 to 1.4dB/cm at =2080nm and < 2dB/cm at  = 5.18 μm.

Cited by 142 publications

References 17 publications

Mid-infrared integrated photonics on silicon: a perspective

Mid-infrared integrated photonics on silicon: a perspective

Silicon photonic devices and platforms for the mid-infrared

Silicon photonic devices for mid-infrared applications

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