Low resistance Al nGaAs ohmic contacts

Abstract

In this paper, we investigate the influence of annealing on the current-voltage characteristics of Al-nGaAs contacts treated with selenious acid (H 2 SeO 3 ). Low-resistivity ohmic contacts were obtained by furnace annealing of Al-GaAs contacts formed on Se modified GaAs surfaces. A specific resistivity as low as 7.5 × 10 −6 cm 2 has been achieved with an Al-nGaAs ohmic contact on an n + GaAs substrate. The formation of the Al-nGaAs ohmic contact is explained by an interface Se reaction with both GaAs and Al.