Low-resistance and high-resistance states in strontium titanate films formed by the sol–gel method

Anaraki, H. Sohrabi; Гапоненко, Н. В.; Litvinov, V. G.; Ermachikhin, A. V.; Kolos, V. V.; Pyatlitski, A. N.; Ivanov, V.A.

doi:10.1134/s1063783415100303

Cited by 3 publications

(4 citation statements)

References 19 publications

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“…(ii) Absorption coefficient α f (λ) of the film depending on its absorption coefficient k f (λ) [27] and wavelength λ as (1) can be determined based on approximate formulas with allowance for light losses only for absorption (Bouguer's law) [17,21], (2) for absorption and single reflection [22,23], (3) and for absorption and double reflection [24], (4) The absorption coefficient in the region of the edge of the intrinsic absorption band is also calculated [25] by a more complicated formula: (5) In formulas (2)-( 5), parameter h f is the film thickness measured in centimeters and T t (λ) and R t (λ) are the measured transmittance and reflectance of the film on the substrate upon normal (ϕ = 0) incidence of nonpolarized light on the sample. After the calculation of the absorption coefficient spectrum, there appears a possibility to determine the width of the SrTiO 3 forbidden energy band based on the Tauc extrapolation [28]: (6) In formula (6), В is a constant and E = 1240λ -1 is the photon energy in electron volts (the wavelength λ is taken in nanometers). The intersection of the linear range of the dependence [α f (λ)E] 2 with the E axis yields an estimate of E g .…”

Section: Spectroscopy Of Condensed Statesmentioning

confidence: 99%

“…Control over functions n s (λ) and k s (λ) is necessary due to their noticeable deviation from dispersion tables known in the literature under conditions of a real experiment. EXPERIMENTAL Strontium titanate films were obtained using a sol prepared by mixing of solutions of strontium acetate in acetic acid and titanium tetraisopropoxide Ti(OCH(CH 3 ) 2 ) 4 in ethylene glycol monomethyl ether in the presence of acetone as a stabilizer [6]. The films were deposited on quartz substrates by centrifuging at 2700 rpm.…”

Section: Spectroscopy Of Condensed Statesmentioning

confidence: 99%

“…Films based on SrTiO 3 are of interest for designing MIS structures and DRAM capacitors, monolithic microwave integrated circuits (MMICs), and IR radiation sensors [1]. The reversible transition of SrTiO 3 from the high-ohmic state to the low-ohmic state under the action of the UV and visible radiation opens a prospect of using this material as memristors-elements of nonvolatile memory [2][3][4][5][6]. Intense photo-, cathode-, and radio luminescence has been found in SrTiO 3 films doped with lanthanides [7,8].…”

Section: Introductionmentioning

confidence: 99%

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Optical Characteristics of Strontium Titanate Films Obtained by the Sol–Gel Method

et al. 2018

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Using data of multiangle spectrophotometry and spectral ellipsometry in the UV and visible ranges, spectra of the refractive indices and absorption coefficients and width of the forbidden band of oneand five-layer strontium titanate films obtained by the sol-gel method have been calculated. Layer-by-layer deposition of sol on quartz substrates, from one to five layers, leads to an increase in film porosity from 4 to 33%. This causes a decrease in the refractive indices in the middle part of the visible spectrum from 2.33 to 1.87, which leads to a decrease in the reflectance and an increase in the transmittance or transparency of fivelayer films. With an increase in the heating temperature of such films from 500 to 750°C, a shift of the absorption band maximum from 239 to 253 nm takes place and the optical width of the forbidden band decreases from 4.63 to 4.20 eV. The absorption band maximum of the single-layer film falls on the wavelength of 252 nm, and its optical width of the forbidden band is 3.96 eV.

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Section: Spectroscopy Of Condensed Statesmentioning

confidence: 99%

Section: Spectroscopy Of Condensed Statesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Optical Characteristics of Strontium Titanate Films Obtained by the Sol–Gel Method

et al. 2018

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“…The transparency and dielectric properties of SrTiO 3 have made it one of the most commonly used singlecrystal substrates for electronic oxide thin-film devices. SrTiO 3 also obtains a certain interest in condensed matter physics due to its conductive phases, low and high resistance switching [13][14][15], photocurrent [16][17][18], and other properties.…”

Section: Introductionmentioning

confidence: 99%

Photoactive Properties of Transport Sol-Gel Layers Based on Strontium Titanate for Perovskite Solar Cells

Semchenko,

Ayvazyan,

Malyutina-Bronskaya

et al. 2023

Photonics

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In this work, we have investigated the photocurrent and spectral sensitivity of the silicon/SrTiO3:xNb/perovskite structures. The sol–gel method carried out the deposition of undoped SrTiO3 layers as well as niobium-doped (SrTiO3:Nb) layers at atomic concentrations of 3 and 6% Nb. The perovskite layer, CH3NH3PbI3−xClx, has been deposited by the vacuum co-evaporation technique. The layers have been characterized by scanning electron microscopy and X-ray diffraction measurements. The volt–ampere characteristics and spectral sensitivity of the fabricated samples have been measured under illumination with selective wavelengths of 405, 450, 520, 660, 780, 808, 905, 980, and 1064 nm of laser diodes. We have shown that for different configurations of applied voltage between silicon, SrTiO3:xNb, and CH3NH3PbI3−xClx, the structures are photosensitive ones with a variation of photocurrent from microamperes to milliamperes depending on Nb concentration in SrTiO3, and the highest photocurrent and spectral sensitivity values are observed when a SrTiO3:Nb layer with 3 at.% of Nb is used. A possible application of the proposed structure with a SrTiO3:Nb layer for perovskite solar cells and photodetectors is being discussed.

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Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

et al. 2020

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Metal oxide resistive switching memories have been a crucial component for the requirements of the Internet of Things, which demands ultra‐low power and high‐density devices with new computing principles, exploiting low cost green products and technologies. Most of the reported resistive switching devices use conventional methods (physical and chemical vapor deposition), which are quite expensive due to their up‐scale production. Solution‐processing methods have been improved, being now a reliable technology that offers many advantages for resistive random‐access memory (RRAM) such as high versatility, large area uniformity, transparency, low‐cost and a simple fabrication of two‐terminal structures. Solution‐based metal oxide RRAM devices are emergent and promising non‐volatile memories for future electronics. In this review, a brief history of non‐volatile memories is highlighted as well as the present status of solution‐based metal oxide resistive random‐access memory (S‐RRAM). Then, a focus on describing the solution synthesis parameters of S‐RRAMs which induce a massive influence in the overall performance of these devices is discussed. Next, a precise analysis is performed on the metal oxide thin film and electrode interface and the recent advances on S‐RRAM that will allow their large‐area manufacturing. Finally, the figures of merit and the main challenges in S‐RRAMs are discussed and future trends are proposed.

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Low-resistance and high-resistance states in strontium titanate films formed by the sol–gel method

Cited by 3 publications

References 19 publications

Optical Characteristics of Strontium Titanate Films Obtained by the Sol–Gel Method

Optical Characteristics of Strontium Titanate Films Obtained by the Sol–Gel Method

Photoactive Properties of Transport Sol-Gel Layers Based on Strontium Titanate for Perovskite Solar Cells

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

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