Low Resistance Ti/Pt/Au Ohmic Contacts to GaAs / Al x Ga1 − x As Heterostructures Using Open‐Tube Zn Diffusion

Bulman, G. E.; Gwilliam, G. F.; Chambers, F. A.

doi:10.1149/1.2097397

Cited by 9 publications

(1 citation statement)

References 20 publications

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“…In the case of the CVD W contacts to p-type GaAs, the very low contact resistance to C doped MLE GaAS was obtained for about ten times lower electrically active acceptor concentrations, than expected from a literature 17,[26][27][28][29][30][31] trend line, Fig. 11.…”

Section: Resultsmentioning

confidence: 53%

Low‐Resistance Contacts with Chemical Vapor Deposited Tungsten on GaAs Grown by Molecular Layer Epitaxy

Oyama

Płotka²,

Matsumoto³

et al. 1999

J. Electrochem. Soc.

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Approximately 100 Å thick, mirror-like, ordered tungsten layers were fabricated on (100) GaAs with chemical vapor deposition, using a W(CO) 6 precursor. Native oxides on GaAs were reduced with AsH 3 pretreatment in a chemical vapor deposition chamber of tungsten. Secondary ion mass spectrometry and Rutherford backscattering spectroscopy analyses indicate tungsten-GaAs mixed layer not thicker than 20 Å. The chemical vapor deposited tungsten was applied to fabrication of state of the art, low resistance contacts to GaAs layers grown with molecular layer epitaxy. Optimization of GaAs doping, pretreatment, and tungsten chemical vapor deposition conditions were necessary to obtain low contact resistance. Contact resistance, measured with the transmission line method, was 3 ϫ 10 Ϫ7 ⍀ cm 2 to Te doped n-type GaAs and below 2 ϫ 10 Ϫ8 ⍀ cm 2 to C doped p-type GaAs. Electrically active donor/acceptor concentrations in GaAs layers grown by molecular layer epitaxy were about one order of magnitude lower than expected from literature trend lines for these contact resistance.

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