Low Resistive Micrometer-Thick SnS:Ag Films for Optoelectronic Applications

Abstract

Ag-doped SnS films have been grown with a thickness of ϳ0.5 m by thermal evaporation technique on Coring 7059 glass substrates at a substrate temperature of 275°C. The effects of doping on the physical properties of the films have been investigated. The physical characteristics of the films are discussed and correlated to the microstructural and electro-optical properties. Electrooptical studies show that undoped SnS films have an electrical resistivity and optical bandgap of 35.6 ⍀ cm and 1.35 eV at room temperature. With the increase of Ag dopant concentration, the resistivity of the SnS layers initially decreased, reached a minimum value of 6.98 ⍀ cm at 15 atom % of Ag and again increased thereafter. However, optical bandgap ͑E g ͒ of the films decreased nonlinearly with increase of Ag percentage. An empirical formula E g = 1.345-0.0014 X + 5.952 ϫ 10 −5 X 2 , which describes the energy gap as a function of the film composition, has been derived. The doping effect on the surface structure of SnS films was also studied.

Effects of complexing Agents on three Steps pulse Electrodeposited SnS thin films

“…There are numerous factors affecting the value of band gap, such as crystallinity (crystallite size) [25], impurities [1,26], native defect states [27,28], and phase purity [29,30]. The present results show that addition of the complexing agents influences oxygen content, phase purity, and crystallinity of the films.…”

Molecular beam epitaxy growth of high quality p-doped SnS van der Waals epitaxy on a graphene buffer layer

“…Hole mobility of 81 cm 2 V À1 s À1 is obtained at a hole concentration p % 1.2 Â 10 17 cm À3 which, to the best of our knowledge, is the highest value obtained in extrinsic SnS thin films. 44,45 Our results indicate that further improvement in the properties of the SnS can be achieved by optimizing the graphene transfer process to avoid formation of folds and pinholes in the layer.…”

Synthesis, Optical Properties and Photovoltaic Application of the SnS Quasi-one-dimensional Nanostructures

“…In the last several years, as one of the most important candidate materials for the solar cell, SnS has attracted much attention and recognition [1][2][3][4][5][6][7][8]. Firstly, SnS is an environment-friendly material without toxic.…”