Low resistivity bcc-Ta/TaN/sub x/ metal gate MNSFETs having plane gate structure featuring fully low-temperature processing below 450°C

Abstract

We have developed a low-resistivity metal gate Metal-Nitride-Semiconductor (MNS) FET technology having conventional plane gate structure featuring fully lowtemperature processing. The gate stack consists of directly grown Silicon Nitride (Si3N4) dielectric using high-density plasma and bcc-phase Tantalum (-l5pQcm) / Tantalum Nitride (bcc-TamaNx) stacked metal gate below l.Oohm/sq. In order to avoid deteriorating the metal gate system, we adopted a low-temperature S/D annealing by Solid Phase Epitaxy (SPE) method.In this paper, we demonstrate an excellent characteristic of Fully-Depleted Silicon-On-Dielectric (FDSOI) metal gate MNSFETs having conventional plane gate structure featuring fully low-temperature proiessing below 450°C.

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

“…Firstly, the stacking structure has been studied, such as dual-layer structure including Sc/TaN x , W/TiN x , and Ta/TaN x , [334,335], three-layer laminated structure including W/Sc/TaN x , and W/Ru x Ta 1Àx /TaN y , Nitride-Metal-Nitride [336][337][338]. For example, Bai et al [337] studied the laminated metal gate electrode consisting of three ultrathin layers, with metal nitride as the bottom or top layers and metal element as the middle layer.…”

Electric Characteristics of Si3N4 Films Formed by Directly Radical Nitridation on Si(110) and Si(100) Surfaces

“…Si 3 N 4 film formed using radical NH is attractive as high-gate dielectrics owing to its high relative dielectric constant (7.5), low leakage current density, and high reliability. [2][3][4] On the other hand, the improvement in the current drivability of MOSFETs without shrinkage of the device is also important for the advanced ULSI devices. Namely, the current drivability of MOSFET has been improved by using Si(110) surface [5][6][7][8][9] and three dimension (3D) structured device.…”

New era of silicon technologies due to radical reaction based semiconductor manufacturing

“…The right direction to follow is to improve the speed performance by increasing the electron and the hole mobilities in Si MOS transistors. In the past, the thermal oxide SiO 2 has been the only choice for the gate insulator film [18,25]. By replacing the thermal oxide with the newly developed radical nitride, it will be possible to improve the electric current drivability, i.e.…”