Low resistivity indium–tin oxide transparent conductive films. II. Effect of sputtering voltage on electrical property of films

Abstract

A low resistivity and high transmittance Sn doped In2O3 (ITO) film was formed on a glass substrate by dc magnetron sputtering and lower sputtering voltage gave a lower resistivity film. At a sputtering voltage of −250 V, the resistivity obtained was 5.0×10−4Ω cm for room temperature substrate, 2.0×10−4Ω cm for 160 °C substrate, 1.9×10−4Ω cm for 200 °C substrate, and 1.2×10−4Ω cm for 460 °C substrate. At a sputtering voltage of −80 V, the resistivity was 1.3×10−4Ω cm for 200 °C substrate. A measurement of Hall effect shows that the decreased resistivity by lower sputtering voltage is not caused by the Hall mobility but by an increased carrier concentration.

Impurity-doped ZnO Thin Films Prepared by Physical Deposition Methods Appropriate for Transparent Electrode Applications in Thin-film Solar Cells

“…With this configuration, the resistivity increase at the location on the substrate surface that corresponds to the erosion area of the target in films prepared by dc-MSD was always higher than that in films prepared by rf-MSD or rf+dc-MSD [32]. The increase in resistivity is attributable to an enhancement in the amount and activity of oxygen that reaches the location on the substrate surface corresponding to the erosion area of the target, resulting from negatively ionized oxygen accelerated by the higher d.c. sputter voltage in dc-MSD than in rf-MSD or rf+dc-MSD [28,32,[34][35][36][37][38][39]. In the current work using moving substrates during the deposition, the amount of resistivity obtainable in the thin films exhibits an average value that is related to the resistivity distribution that results from depositions on the surface of fixed substrates.…”

Indium Saving Indium Tin Oxide Thin Films Deposited by Sputtering at Room Temperature

“…Ряд робіт присвячено отриманню плівок оксиду індію-олова з низьким опором при низьких температурах, використовуючи різноманітні методи нанесення, такі як магнетронне напилення [1][2][3], термічне напилення [4] та імпульсне лазерне напилення [5,6].…”

Copercolating Networks: An Approach for Realizing High-Performance Transparent Conductors using Multicomponent Nanostructured Networks

“…In this analysis, representative publications are chosen based on (i) performance (transmittance (T) versus sheet resistance (R S ) relationship), which is representative of high-quality results within the class, (ii) availability of a complete set of data (thin-film thickness (t), nanowire density/thickness, T, R S or conductivity/resistivity), and (iii) a sufficiently large thickness range, allowing meaningful interpolation or extrapolation of T over a range of~70% to 90%. In general, a variety of results have been obtained within a given class, corresponding to different deposition techniques, width and length of nanowires, or postprocessing techniques [16][17][18][19][20][21]. Most of the studies account for the optical properties of the substrate, typically by correcting for the substrate reflectance and normalizing the measured T values to those measured for the substrate (to compensate for substrate loss).…”