Low resistivity ohmic contact to n-type poly-GaN using a Ti/Au/Ni/Au multilayer metal system

Uen, Wu‐Yih; Li, Zhenyu; Lan, Shan-Ming; Yang, Tao; Chen, Yen‐Wen; Liao, Sen-Mao

doi:10.1016/j.sse.2007.02.028

Cited by 3 publications

(1 citation statement)

References 28 publications

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“…This is done with the help of a plasma sputtered ZrO x mask. During annealing NiO is built at the metal/semiconductor interface and allows a low specific resistance of the junction [5].…”

Section: Growth and Processingmentioning

confidence: 99%

TEM investigation of a processed InGaN based laser grown by PAMBE on bulk GaN substrate

Kret¹,

Ivaldi

Żak

et al. 2010

Phys. Status Solidi (c)

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The structural investigation of the processed InGaN/GaN LDs and LEDs structures are performed by Transmission Electron Microscopy. A plasma assisted molecular beam epitaxy (PAMBE) process is used to fabricate laser structures on high pressure bulk GaN substrates. The indium composition inside the active multi quantum wells (MQW) region is measured by the analysis of the local lattice distortion using lattice fringes images. The characterization of different defects in the laser's structure is given in this paper. Defects, crossing the entire active region of the laser structure, have been detected. These defects can be related to the discontinuities of the Au/Ni contact. The local heating caused by the local non‐uniform current density can be the origin of these defects. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…This is done with the help of a plasma sputtered ZrO x mask. During annealing NiO is built at the metal/semiconductor interface and allows a low specific resistance of the junction [5].…”

Section: Growth and Processingmentioning

confidence: 99%

TEM investigation of a processed InGaN based laser grown by PAMBE on bulk GaN substrate

Kret¹,

Ivaldi

Żak

et al. 2010

Phys. Status Solidi (c)

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Employment of high Resolution RBS to characterize ultrathin transparent electrode in high efficiency GaN based Light Emitting Diode

Wang

Chan

2011

Materials Challenges and Testing for Supply of Energy and Resources

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Influence on moisture sensor performances, and characterization of different specific area porous silicon layers

et al. 2007

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This paper presents results obtained for characterization of porous silicon (PS) layers having different nanostructures, and the influence of this parameter on moisture sensor performances. Two PS layers have been studied, both present the same porosity of 45% and differ in their specific area: 330 m²/g for PS 1 and 223 m²/g for PS 2 . Sorption isotherms were measured; the results justify the use of adsorption theories used to characterize mesoporous materials. Average values of pore diameter computed from adsorption theories and images processing show that PS 1 presents smaller pores than PS 2 . Pore size distributions have been estimated, showing the wider distribution of PS 2 compared with PS 1 . We measured resistivity of PS layers as a function of relative humidity (RH). We found that PS 1 presents higher resistivity and higher relative variation of resistivity. Exposed to moisture step, PS 1 sensor presents faster response time, showing a second advantage among performances criteria.

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Low resistivity ohmic contact to n-type poly-GaN using a Ti/Au/Ni/Au multilayer metal system

Cited by 3 publications

References 28 publications

TEM investigation of a processed InGaN based laser grown by PAMBE on bulk GaN substrate

TEM investigation of a processed InGaN based laser grown by PAMBE on bulk GaN substrate

Employment of high Resolution RBS to characterize ultrathin transparent electrode in high efficiency GaN based Light Emitting Diode

Influence on moisture sensor performances, and characterization of different specific area porous silicon layers

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