Low resistivity ohmic contacts on 4H-silicon carbide for high power and high temperature device applications

Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport

“…For example, the maximum SCR value when annealed 212108 (2013) at 800 C is 4 Â 10 À4 X Á cm 2 when the minimum is 1:3 Â 10 À6 X Á cm 2 . The minimum value is one of the lowest SCR ever reported in the literature on p-type 4H-SiC, 14 for the best of our knowledge. This result is promising for the realization of power devices that need a low contact resistance on p-type 4H-SiC.…”

Silicon Carbide Schottky Barrier Diode

“…More SiC devices were fabricated as high quality SiC become available in early 1990s and both the voltage and current capabilities of these SiC SBDs increase quickly in the years followed [54,64,66,[80][81][82][83][84][85][86][87][88][89][90][91][92][93][94]. Recently, a 4H-SiC SBD with a breakdown voltage of 10.8kV was reported.…”

Hetero-epitaxial growth of TiC films on MgO(001) at 100 °C by DC reactive magnetron sputtering

“…In order to extend the area of applications and to reduce the associated fabrication costs, in recent years many efforts have been done for epitaxial TiC thin film deposition at low temperatures. Up-to-date single-crystal growth at much lower temperatures was achieved by co-evaporation of metallic Ti and C60 as carbon source [7,17,18]. Considering the specific experimental conditions used, the authors conclude that the epitaxial growth of TiC film starts above 100°C, but below 200°C.…”

“…TiC is already used in a wide variety of applications, such us wearresistant coatings [5], passive films [6], high power electronic devices [7], and many others. For applications envisaging low electrical conductivity, as needed in high power electronics, ohmic contacts made by TiC hetero-epitaxial films proved to be a valuable solution [8,10].…”