Low Ron and high robustness ESD protection design for low‐voltage power clamp application

Song, Bo-Bae; Koo, Yong-Seo

doi:10.1049/el.2016.2391

Cited by 12 publications

(6 citation statements)

References 3 publications

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“…The Figure 8 shows the cross section and layout of the proposed ESD protection circuit. As a structural feature of the conventional low-Ron silicon-controlled rectifier (LRSCR), which is the base of the proposed ESD protection circuit structure, by inserting the grounded gate N-MOS (GGNMOS) structure into the conventional SCR structure, an avalanche breakdown happens in the N+ bridge and P-Well regions to lower the trigger voltage [15,16]. By adding P-well and P+ implant regions to the anode region, an additional parasitic PNP bipolar transistor (Qpnp2) is operated, rather than the conventional SCR [17].…”

Section: Ldo Regulator Circuit Configuration With Embedded Esd Protec...mentioning

confidence: 99%

Design of Destruction Protection and Sustainability Low-Dropout Regulator Using an Electrostatic Discharge Protection Circuit

et al. 2023

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In terms of sustainable power semiconductors, the embedding of an electrostatic discharge (ESD) protection circuit in an integrated circuit (IC) is an important aspect. In order for the semiconductor circuit to operate continuously or stably, a sufficient protection circuit against external surges must be configured. The purpose of this thesis is not only to effectively operate the low-dropout (LDO) regulator according to the load current, but to also secure high reliability against ESD situations by embedding an ESD protection circuit at the IC level. Moreover, the existence and nonexistence of an ESD protection circuit at the IC level is directly related to reliability. The proposed LDO regulator has high reliability against ESD situations using an embedded silicon controlled rectifier (SCR)-based ESD protection circuit in the I/O clamp and power clamp. The results revealed that the LDO regulator can not only effectively control the output voltage according to the load current, but it can also stably maintain the output voltage against the ESD surge. Moreover, the proposed LDO regulator with an embedded ESD protection circuit implemented in a 0.13 μm BCD process maintained an undershoot voltage of 21 mV and overshoot voltage of 19 mV for a load current of 300 mA.

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Section: Ldo Regulator Circuit Configuration With Embedded Esd Protec...mentioning

confidence: 99%

Design of Destruction Protection and Sustainability Low-Dropout Regulator Using an Electrostatic Discharge Protection Circuit

et al. 2023

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“…The turned‐on NPN parasitic bipolar transistor supplies a base current to the PNP1 and PNP2, and both the PNP transistor and one NPN transistor are turned on. As a result, the proposed ESD protection circuit has a high holding voltage because of its low positive feedback current gain [4, 5].…”

Section: Proposed Esd Protection Circuit Using Penta‐well Structurementioning

confidence: 99%

Design of current detection LDO regulator with silicon controlled rectifier based electrostatic discharge protection circuit to provide optimized voltage and power for system‐on‐chip applications

Kwon

Koo

2022

Electronics Letters

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Various levels of circuits and systems in the ultra-low nanometer fabrication process should be considered to implement a system-on-chip (SOC) application to reduce power consumption. This letter is intended to propose a current detection structure that supplies and discharges additional current along the load current to provide the optimized voltage and power for SOC applications. The proposed electrostatic discharge (ESD) protection circuit placed on the power line and I/O has improved the reliability by preventing the direct or indirect destruction of the internal integrated circuit (IC) due to ESD. In addition, the proposed low drop out (LDO) regulator for the low-voltage applications has combined an ESD protection circuit to secure the high reliability of the IC. The proposed LDO regulator is implemented with a 0.18-μm BCD process and is kept an undershoot voltage of 23 mV and an overshoot voltage of 25 mV for a load current of 200 mA.

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“…Therefore, the width of the space charge region increases to the direction of the N-well, and then the maximum electric field where the avalanche breakdown occurs is reduced, which in turn causes an increase in the breakdown voltage. A formula between the depletion layer and the maximum electric field is shown as follows [11], In this case, the design variable L2 has a length of 0 um. Where Vbi indicates the potential barrier, VR is the applied reverse bias, and W is a width of the space charge region.…”

Section: Tlp Measurementmentioning

confidence: 99%

A Fabrication of 4H-Silicon Carbide Based-Lateral SCR for ESD Protection Device

Do¹,

Park²

2019

IJAST

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This paper demonstrates a silicon carbide-based lateral silicon controlled rectifier (SCR) for use as an electrostatic discharge (ESD) protection device for high current ICs mounted on EVs or self-driving vehicles. The protection devices were designed with three split items and were fabricated with a line width of 0.5 µm. The protection devices were verified in terms of their electrical characteristics by using a transmission line pulse (TLP) system and a curve tracer. The measurements indicate that the devices have a trigger voltage of 165 V and a holding voltage of 40 V. The lateral SCR devices have a breakdown voltage (BV) of 82 V. In addition, the second breakdown current of the demonstrated SCR is above 18 A.

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Low Ron and high robustness ESD protection design for low‐voltage power clamp application

Cited by 12 publications

References 3 publications

Design of Destruction Protection and Sustainability Low-Dropout Regulator Using an Electrostatic Discharge Protection Circuit

Design of Destruction Protection and Sustainability Low-Dropout Regulator Using an Electrostatic Discharge Protection Circuit

Design of current detection LDO regulator with silicon controlled rectifier based electrostatic discharge protection circuit to provide optimized voltage and power for system‐on‐chip applications

A Fabrication of 4H-Silicon Carbide Based-Lateral SCR for ESD Protection Device

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