Low series resistance high-efficiency GaAs/AlGaAs vertical-cavity surface-emitting lasers with continuously graded mirrors grown by MOCVD

Zhou, Ping; Cheng, Julian; Schaus, C.F.; Sun, S. Z.; Zheng, Kang; Armour, E.; Hains, C. P.; Hsin, Wei; Myers, David R.; Vawter, G.A.

doi:10.1109/68.87923

Cited by 90 publications

(27 citation statements)

References 9 publications

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“…Meanwhile, we also considered parasitic series resistance ( R s ) in the analytic model to accurately analyse the device operation. R s is mainly associated with the contact resistance between the metal electrode and the semiconductor46. Here, the reduction in n-type carrier concentration due to decreasing temperature leads to an increase in the depletion width at the metal/semiconductor (MS) junction and thereby a suppression of the e-field-dependent barrier height lowering effect, eventually increasing the contact resistance at the MS junction (Supplementary Fig.…”

Section: Resultsmentioning

confidence: 99%

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

et al. 2016

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Recently, negative differential resistance devices have attracted considerable attention due to their folded current–voltage characteristic, which presents multiple threshold voltage values. Because of this remarkable property, studies associated with the negative differential resistance devices have been explored for realizing multi-valued logic applications. Here we demonstrate a negative differential resistance device based on a phosphorene/rhenium disulfide (BP/ReS2) heterojunction that is formed by type-III broken-gap band alignment, showing high peak-to-valley current ratio values of 4.2 and 6.9 at room temperature and 180 K, respectively. Also, the carrier transport mechanism of the BP/ReS2 negative differential resistance device is investigated in detail by analysing the tunnelling and diffusion currents at various temperatures with the proposed analytic negative differential resistance device model. Finally, we demonstrate a ternary inverter as a multi-valued logic application. This study of a two-dimensional material heterojunction is a step forward toward future multi-valued logic device research.

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Section: Resultsmentioning

confidence: 99%

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

et al. 2016

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“…Details of the device design and characteristics are given in Ref. 1. The current is injected vertically into a gain-guided active region, whose lateral spreading is confined via proton-implantation.…”

Section: Surface-emithng Lasers As Optical Sourcesmentioning

confidence: 99%

“…1 To the extent that thermal dissipation is not a limiting factor, VCSELS can be integrated into a dense, individually-addressable, two-dimensional array,6 which is a prerequisite for any two-dimensional optical processing architecture. The VCSEL's smaller beam divergence provides reduced optical cross-talk in free space applications.…”

mentioning

confidence: 99%

Cascadable high-performance optic switches and optical logic based on vertical-cavity surface-emitting lasers

Cheng

Zhou

Schaus

et al. 1992

Laser Diode Technology and Applications IV

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ABsTRAc:TVertical-cavity surface-emitting lasers (VCSELS) are high-speed optical sources that are readily integrable with phototransistors and photothyristors to form a versatile family of intelligent optical switches or smart pixels that can perform switching, logic, regeneration, and memory functions. Their surface-normal format facilitates the monolithic integration of two-dimensional arrays for applications in photonic switching networks and optical computing architectures. is INTRODUCTION:Vertical-cavity surface-emitting lasers (VCSELS) are high-speed optical sources with good optical power, low beam divergence, and excellent modal and spectral characteristics. Recently, significant progress has been made in improving the room-temperature, cw operating characteristics of VCSELs,3 which have demonstrated high modulation speed (8 GHz small-signal bandwidth)4, low threshold current density (770 A/cm2),1 high differential quantum efficiency ( > 80%),1,2 and high output power (18 mW).3 Because of their surface-normal format and low beam divergence (80 far-field full-width5), VCSELS can be readily integrated into two-dimensional source arrays that may be applicable in parallel optical computing, communication, interconnection, and switching networks. The VCSELS have been, for the most part, short wavelength, (In)GaAs-based devices, and the room temperature, cw operation of efficient InGaAsP/InP-based VCSELS for optical fiber applications has not yet been demonstrated. The operating characteristics of VCSELS are severely limited by thermal constraints arising from a high series resistance, a high operating voltage and the resultant high power dissipation level. Significant progress has been made towards meliorating these problems, and VCSELs with a power dissipation level significantly below 10 mW has been achieved, 488

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“…One area that has received substantial interest is in optimizing the electrical and optical properties of the distributed Bragg reflectors (DBRs) used as the VCSEL mirrors. The competing interests of both the optical and electrical requirements of the DBRs necessitates techniques such as alloy compositional grading and modulated doping profiles within the layers in the mirror [1][2][3][4]. Utilizing these methods, high-performance VCSELs, at a variety of wavelengths, have been demonstrated using both metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE).…”

Section: Introductionmentioning

confidence: 99%

Compositional grading in distributed Bragg reflectors, using discrete alloys, in vertical-cavity surface-emitting lasers

Pickrell¹,

Louderback²,

Fish³

et al. 2005

Journal of Crystal Growth

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Low series resistance high-efficiency GaAs/AlGaAs vertical-cavity surface-emitting lasers with continuously graded mirrors grown by MOCVD

Cited by 90 publications

References 9 publications

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

Cascadable high-performance optic switches and optical logic based on vertical-cavity surface-emitting lasers

Compositional grading in distributed Bragg reflectors, using discrete alloys, in vertical-cavity surface-emitting lasers

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