2012
DOI: 10.1143/jjap.51.031501
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Low-Shrinkage Spin-On Glass for Low Parasitic Capacitance Gap-Filling Process in Advanced Memory Devices

Abstract: A new low-dielectric-constant spin-on glass (SOG) with a k value of 2.4 has been developed for a gap-filling process in advanced memory devices. The low-shrinkage characteristic of the SOG during thermal curing provides capabilities of gap filling and planarizing as high as those of conventional reflowable SOGs. The low-shrinkage SOG has thermal stability up to 800 C and chemical stability against diluted hydrofluoric acid, sulfuric acid-hydrogen peroxide, and amine-based solutions, which makes it possible to … Show more

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