Low Stress TSV Arrays for High-Density Interconnection

Jiao, Binbin; Qiao, Jingping; Jia, Shiqi; Liu, Ruiwen; Wei, Xueyong; Yun, Shichang; Kong, Yanmei; Ye, Yuxin; Du, Xiangbin; Yu, Lihang; Cong, Bo

doi:10.1016/j.eng.2023.11.023

Cited by 17 publications

(3 citation statements)

References 39 publications

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“…The enhancement in light current could be ascribed to the direct correlation between the absorbed photon flux and the number of photogenerated carriers. The correlation between light current and incoming illumination intensity is often fitted by a power function and expressed as I normalp normalh normalo normalt normalo = γ P α where α stands for the exponent (0.5 < α < 1) which governs the response of the light current to the incoming illumination power, while γ refers to a constant for a certain wavelength. , The obtained experimental data were fitted by a power function according to eq and the corresponding α values were 0.69 and 0.67 at the wavelengths of 505 and 595 nm, respectively, for the hybrid 1D/2D heterojunction device in Figure g,h. This fractional power dependency suggests that the hybrid 1D/2D heterojunction photodetector may undergo a complicated process of electron–hole pair generation, trapping, and recombination. − …”

Section: Resultsmentioning

confidence: 99%

“…The temporal response of the flexible devices is a significant task for benchmark applications. ,,,,,, The temporal photoresponse was monitored after the flexible device was kept in an ambient environment for 15 days, and the spectral sensitivity and responsivity were recorded. The stable spectral responsivity with less than 5% fluctuation amplitude is attributed to the constant light current as depicted in Figures h and S11.…”

Section: Resultsmentioning

confidence: 99%

“…where α stands for the exponent (0.5 < α < 1) which governs the response of the light current to the incoming illumination power, while γ refers to a constant for a certain wavelength. 25,55 The obtained experimental data were fitted by a power function according to eq 11 and the corresponding α values were 0.69 and 0.67 at the wavelengths of 505 and 595 nm, respectively, for the hybrid 1D/2D heterojunction device in Figure 3g,h. This fractional power dependency suggests that the hybrid 1D/2D heterojunction photodetector may undergo a complicated process of electron−hole pair generation, trapping, and recombination.…”

Section: ■ Introductionmentioning

confidence: 99%

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Tuning Performance of Heterojunction Flexible Photodetectors by Energy Band Alignment Engineering

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Exploring innovative constituents in one-dimensional (1D) nanomaterials and integrating them with two-dimensional (2D) van der Waals (vdW) materials are in high demand as a unique platform for discovering new physical phenomena and designing innovative interface-based devices. This work demonstrates for the first time a supersensitive flexible broadband photodetector based on a hybrid 1D/2D heterojunction that integrates the synergetic properties of a 1D CdS x Se 1−x nanobelt and a 2D PbI 2 flake and systematically investigates their stoichiometric-dependent photoelectric response. The fabricated hybrid 1D/2D heterojunction device significantly boosts the light current while suppressing the dark current to the pA scale, enabling a high responsivity of 10 5 A/W. The remarkable photoresponse performance is ascribed to efficient charge carrier transfer between the 1D CdS x Se 1−x nanobelt and the 2D PbI 2 flake resulting from energy band alignment engineering. Meanwhile, the proposed hybrid 1D/ 2D heterojunction can be fabricated with a flexible tape substrate.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

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A State‐of‐the‐Art Review of Through‐Silicon Vias : Filling Materials, Filling Processes, Performance, and Integration

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Through‐silicon via (TSV) technology realizes high‐density interconnections within and between different dies (chips) by vertically drilling holes in silicon and filling them with various conductive materials. It is an effective way to achieve miniaturization, lightweight, and multi‐functionality in post‐Moore microelectronics. In this review, the process optimization in TSV preparation, various filling techniques, and different filler materials are comprehensively summarized and discussed. It also delves into the characterization and reliability analysis of TSV performance under multi‐physical fields of mechanical, thermal, and electrical. Moreover, the review explores the challenges and solutions for TSVs in regards of integration/packaging and cost aspects. This review can be used to understand the latest research progresses and applications of TSVs, and provide reference and guidance for future research and applications for advanced TSV technology.

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First Principle Investigations of Cesium Based Cubic CsSiX₃ (X = Cl and F) Perovskites for Solar Conversion Applications: A DFT Study

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The use of solar water‐splitting technology is anticipated to reduce the disparity between demand and consumption of energy. Herein, CASTEP software is used to investigate the perovskite CsSiX3 (X = Cl and F) materials by applying GGA‐PBE exchange–correlation functional. According to structure properties, compounds possess a cubic structure of “pm3m” by using space group 221. The direct band gaps in the CsSiX3 (X = Cl and F) compounds are 1.04 and 1.07 eV, respectively. Measures of the density of states and the partial density of states (PDOS) are being utilized to determine the degree of electron localization in several bands. The compounds' optical characteristics are examined by altering their relation between the dielectric function (DF) scales and the pertinent peak. According to our results, the mechanical properties show that CsSiCl3 is brittle (0.13, 045) and CsSiF3 is ductile (0.32, 2.52) and stable with covalent bonds. Compounds CsSiCl3 and CsSiF3 modulus and elastic constants are {B (8.259, 52.375), E (8.110, 55.082), and G (18.331, 20.790)} and {C11 (13.766, 73.566), C12 (5.506, 41.780), and C44 (10.763, 24.052)} are found, according to mechanical properties. Therefore, such materials can be used for photovoltaic light absorption in the visible spectrum. These materials offer a wide range of possible uses in sensing and solar conversion because compounds combine effectively.

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Low Stress TSV Arrays for High-Density Interconnection

Cited by 17 publications

References 39 publications

Tuning Performance of Heterojunction Flexible Photodetectors by Energy Band Alignment Engineering

Tuning Performance of Heterojunction Flexible Photodetectors by Energy Band Alignment Engineering

A State‐of‐the‐Art Review of Through‐Silicon Vias : Filling Materials, Filling Processes, Performance, and Integration

First Principle Investigations of Cesium Based Cubic CsSiX₃ (X = Cl and F) Perovskites for Solar Conversion Applications: A DFT Study

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Low Stress TSV Arrays for High-Density Interconnection

Cited by 17 publications

References 39 publications

Tuning Performance of Heterojunction Flexible Photodetectors by Energy Band Alignment Engineering

Tuning Performance of Heterojunction Flexible Photodetectors by Energy Band Alignment Engineering

A State‐of‐the‐Art Review of Through‐Silicon Vias : Filling Materials, Filling Processes, Performance, and Integration

First Principle Investigations of Cesium Based Cubic CsSiX3 (X = Cl and F) Perovskites for Solar Conversion Applications: A DFT Study

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First Principle Investigations of Cesium Based Cubic CsSiX₃ (X = Cl and F) Perovskites for Solar Conversion Applications: A DFT Study