Low Temperature Activation of Mg-Doped GaN in O2 Ambient

Kuo, Chia‐Hung; Chang, Shoou Jinn; Su, Yan Kuin; Wu, Liang; Sheu, Jinn Kong; Chen, Chin Hsiang; Chung, Gou

doi:10.1143/jjap.41.l112

Cited by 50 publications

(28 citation statements)

References 3 publications

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“…For an efficient activation of p-GaN, a number of studies were attempted by employing the post-thermal annealing process [3][4][5], minority carrier injection [6,7], laser irradiation [8][9][10], and etc. Very recently, the electrochemical potentiostatic activation (EPA) method [11] was proposed to improve the electrical characteristics of Mg-doped p-GaN.…”

Section: Introductionmentioning

confidence: 99%

Electrical characteristics of Mg-doped p-GaN treated with the electrochemical potentiostatic activation method

Lee

et al. 2014

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

Electrical characteristics of Mg-doped p-GaN treated with the electrochemical potentiostatic activation method

Lee

et al. 2014

Journal of Alloys and Compounds

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“…[13][14][15][16][17][18][19][20][21][22][23][24][25][26][27] Briefly, trimethylaluminum, trimethylgallium, trimethylindium, and ammonia were used as aluminum, gallium, indium, and nitrogen sources, respectively. Biscyclopentadienyl magnesium (CP 2 Mg) and disilane (Si 2 H 6 ) were used as the p-type and n-type doping sources, respectively.…”

Section: Methodsmentioning

confidence: 99%

InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer

Chang

et al. 2003

Journal of Elec Materi

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Nitride-based light-emitting diodes (LEDs) with Si-doped n ϩ -In 0.23 Ga 0.77 N/GaN short-period superlattice (SPS) tunneling contact top layer were fabricated. It was found that although the measured specific-contact resistance is around 1 ϫ 10 Ϫ2 ⍀-cm 2 for samples with an SPS tunneling contact layer, the measured specific-contact resistance is around 1.5 ϫ 10 0 ⍀-cm 2 for samples without an SPS tunneling contact layer. Furthermore, it was found that one could lower the LED-operation voltage from 3.75 V to 3.4 V by introducing the SPS structure. It was also found that the LED-operation voltage is almost independent of the CP 2 Mg flow rate when we grow the underneath p-type GaN layer. The LEDoutput intensity was also found to be larger for samples with the SPS structure.

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“…Details of the growth conditions can be found elsewhere. [9][10][11][12][13][14][15][16][17] The InGaN/GaN MQW LED structure consists of a 30-nm-thick, GaN-nucleation layer grown at a low temperature of 560°C; a 4-mthick, Si-doped, n-GaN-cladding layer; an InGaN/ GaN MQW active region; a 50-nm-thick, Mg-doped, p-Al 0.15 Ga 0.85 N-cladding layer; and a 0.25-m-thick, Mg-doped, p-contact layer. The InGaN/GaN MQW active region consists of five pairs of 3-nm-thick, In 0.05 Ga 0.95 N-well layers and 12-nm-thick, GaNbarrier layers.…”

Section: Methodsmentioning

confidence: 99%

Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers

Kuo

Chang

et al. 2003

Journal of Elec Materi

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The In 0.05 Ga 0.95 N/GaN, In 0.05 Ga 0.95 N/Al 0.1 Ga 0.9 N, and In 0.05 Ga 0.95 N/Al 0.18 Ga 0.82 N multiple-quantum well (MQW) light-emitting diodes (LEDs) were prepared by metal-organic chemical-vapor deposition. (MOCVD). It was found that the 20-mA electroluminescence (EL) intensity of the InGaN/Al 0.1 Ga 0.9 N MQW LED was two times larger than that of the InGaN/GaN MQW LED. The larger maximumoutput intensity and the fact that maximum-output intensity occurred at a larger injection current suggest that Al 0.1 Ga 0.9 N-barrier layers can provide a better carrier confinement and effectively reduce leakage current. In contrast, the EL intensity of the InGaN/Al 0.18 Ga 0.82 N MQW LED was smaller because of the relaxation that occurred in the MQW active region of the sample.

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Low Temperature Activation of Mg-Doped GaN in O2 Ambient

Cited by 50 publications

References 3 publications

Electrical characteristics of Mg-doped p-GaN treated with the electrochemical potentiostatic activation method

Electrical characteristics of Mg-doped p-GaN treated with the electrochemical potentiostatic activation method

InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer

Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers

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