Low-temperature and pressure response of InAlN/GaN ring-shaped high electron mobility transistors

Chapin, Caitlin A.; Miller, Ruth A.; Chen, Ruiqi; Bowling, Karen M.; Senesky, Debbie G.

doi:10.1109/transducers.2017.7994166

Cited by 1 publication

(1 citation statement)

References 14 publications

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“…At present, there are three main pressure-sensing methods for high-temperature environments. One method is based on active pressure-sensitive devices such as field effect transistor [ 5 , 6 , 7 ], piezoelectric active sensor [ 8 ], P-N junction based piezoresistive sensor [ 9 ], and so on. The electronic effect of active devices fade, even disappear, as temperature increases; therefore, active devices usually work at temperatures below 600 °C [ 3 , 6 , 10 , 11 , 12 ], far lower than the requirement of aeronautical applications.…”

Section: Introductionmentioning

confidence: 99%

Microwave Wire Interrogation Method Mapping Pressure under High Temperatures

et al. 2017

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It is widely accepted that wireless reading for in-situ mapping of pressure under high-temperature environments is the most feasible method, because it is not subject to frequent heterogeneous jointing failures and electrical conduction deteriorating, or even disappearing, under heat load. However, in this article, we successfully demonstrate an in-situ pressure sensor with wire interrogation for high-temperature applications. In this proof-of-concept study of the pressure sensor, we used a microwave resonator as a pressure-sensing component and a microwave transmission line as a pressure characteristic interrogation tunnel. In the sensor, the line and resonator are processed into a monolith, avoiding a heterogeneous jointing failure; further, microwave signal transmission does not depend on electrical conduction, and consequently, the sensor does not suffer from the heat load. We achieve pressure monitoring under 400 °C when employing the sensor simultaneously. Our sensor avoids restrictions that exist in wireless pressure interrogations, such as environmental noise and interference, signal leakage and security, low transfer efficiency, and so on.

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