2000
DOI: 10.1016/s0924-4247(99)00372-6
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Low-temperature anodic bonding to silicon nitride

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Cited by 23 publications
(12 citation statements)
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“…Before the encapsulation of the nanochannels, the silicon nitride was treated with oxygen plasma (Tepla 132 from PVA Tepla, Feldkirchen, Germany. Parameters: RF power 1000 W, pressure 0.73 mbar, 100 • C, 60 min) to create a surface composed mainly of silicon dioxide [26,27]. The inner surface of our nanochannels consisted of a few monolayers of silicon dioxide exposing silanol groups (Fig.…”
Section: Microfabrication Process Of Nanochannelsmentioning
confidence: 99%
“…Before the encapsulation of the nanochannels, the silicon nitride was treated with oxygen plasma (Tepla 132 from PVA Tepla, Feldkirchen, Germany. Parameters: RF power 1000 W, pressure 0.73 mbar, 100 • C, 60 min) to create a surface composed mainly of silicon dioxide [26,27]. The inner surface of our nanochannels consisted of a few monolayers of silicon dioxide exposing silanol groups (Fig.…”
Section: Microfabrication Process Of Nanochannelsmentioning
confidence: 99%
“…However, the possibility of bonding glass to materials other than silicon may provide a higher degree of freedom in the device design, and can even be essential for the realization of some devices. Therefore, anodic bonding to polysilicon (von Arx et al 1995), thermal SiO 2 (Plaza et al 1998), and Si 3 N 4 (Weichel et al 2000) have been subject to substantial interest.…”
Section: Introductionmentioning
confidence: 99%
“…33 For anodic bonding to work, it was necessary to form a thin SiO 2 /Si x O y N z layer on the SiN x surface by subjecting it to oxygen plasma. Importantly, the plasma power was kept low (25 W) to minimize surface roughening which can inhibit the bonding process, as described by Weichel et al (32) Anodic bonding optimization was carried out between 400 and 1000 V on a 350–400 °C hot plate for 10–90 min with borosilicate glass (Borofloat 33), which has a matching thermal expansion coefficient to SiN x .…”
Section: Resultsmentioning
confidence: 99%