Low-temperature-atomic-layer-deposition of SiO2 with Tris(dimethylamino)Silane (TDMAS) and Ozone using Temperature Controlled Water Vapor Treatment

Hirose, Fumihiko; Kinoshita, Yuta; Shibuya, Senkichi; Miya, Hironobu; Hirahara, Kazuro; Kimura, Yasuo; Niwano, Michio

doi:10.1149/1.3122106

Cited by 10 publications

(7 citation statements)

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“…17 The detailed optical, structural and electrical properties were investigated. 18 It also was reported 19 that TD-MAS (tris(dimethylamino)silane [(CH 3 ) 2 N] 3 SiH), water, and ozone could be used as precursors to grow SiO 2 at low temperatures. In the published researches, there is rare work on thin ALD SiO 2 films under 100 cycles (<5 nm).…”

mentioning

confidence: 99%

High-Quality Thin SiO₂Films Grown by Atomic Layer Deposition Using Tris(dimethylamino)silane (TDMAS) and Ozone

Han

Chen

2013

ECS J. Solid State Sci. Technol.

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Atomic layer deposition of SiO2 using tris(dimethylamino)silane and ozone were studied comprehensively. It was found that SiO2 grew linearly at different temperatures while the growth rate increased at higher temperatures. For thickness <3.5 nm, the direct tunneling current of the ALD SiO2 is comparable to that of thermally grown SiO2 when considering its equivalent oxide thickness (EOT). The frequency dispersion and hysteresis behavior of the C-V curves of the ALD SiO2 films deposited at 100°C, 200°C, and 300°C are all very small in the thickness region of <3.5 nm, suggesting excellent interfacial quality. Based on analysis of mismatch between the films’ EOT and their physical thicknesses, the ALD SiO2 thin films are likely to be silicon-rich in composition. From the EOT point-of-view, the ALD SiO2 exhibits the same breakdown electrical field as that of the thermal oxide. From the physical thickness point-of-view, the breakdown electrical field is slightly lower than that of the thermal silicon oxide. The ALD SiO2 can be used as high-quality gate insulators for thin-film MOS transistors, and insulators for sensor structures and nanostructures on non-silicon substrates.

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confidence: 99%

High-Quality Thin SiO₂Films Grown by Atomic Layer Deposition Using Tris(dimethylamino)silane (TDMAS) and Ozone

Han

Chen

2013

ECS J. Solid State Sci. Technol.

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“…10,11 Ozone based processes can be combined with additional H 2 O exposures to facilitate Si precursor adsorption on hydroxyl sites. [12][13][14] Also Si 2 Cl 6 can be used with ozone, but the film growth requires higher deposition temperatures. 15 Despite the recent advances in ALD SiO 2 , there is still need for studies on alternative approaches to low refractive index materials.…”

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confidence: 99%

Atomic Layer Deposition and Characterization of Aluminum Silicate Thin Films for Optical Applications

Hämäläinen

Ihanus

Sajavaara

et al. 2011

J. Electrochem. Soc.

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Optical multilayer interference coatings rely on the refractive index differences and specific thicknesses of the low and high refractive index materials used in optical multilayer structures. An accurate control of important parameters such as film thicknesses, uniformities, and refractive indexes is demanding. Atomic layer deposition ͑ALD͒ inherently possesses many characteristics beneficial for obtaining fully conformal and uniform films of specific thicknesses with excellent repeatability. Additionally, the layer-by-layer deposition of the films allows tuning of the film stack properties, such as refractive index, which is an advantage when designing optical filters. By now, Al 2 O 3 has been most often used as a low refractive index material in ALD made interference filters because of a lack of suitable SiO 2 ALD processes. To lower the refractive index from that of Al 2 O 3 , we have developed and examined various ALD processes of aluminum silicate thin films. We concentrate on reporting the refractive indexes, growth rates, and compositions of the films as these parameters are vital for screening suitable ALD processes for optical applications. By varying the amount of silicon in the Al X Si Y O Z thin films, the refractive indexes between 1.47 and 1.59 were obtained in this study.Atomic layer deposition ͑ALD͒ 1-4 is one of the most attractive thin film deposition methods in applications where film conformality, uniformity, thickness controllability, and repeatability are crucial. These characteristics make ALD a potential technique for the deposition of optical multilayer interference coatings, such as antireflection coatings, neutral beam splitters, high-reflection coatings, and Fabry-Perot filters. 5 In general, optical multilayer structures consist of stacks of alternating high and low refractive index materials of specific thicknesses. TiO 2 , Ta 2 O 5 , and Nb 2 O 5 are commonly applied for the high refractive index layers, while SiO 2 and MgF 2 are common material choices for the low refractive index layers. The development of appropriate, robust SiO 2 processes has been challenging in ALD for a long time because of the lack of proper silicon precursors, in particular for processes using water as an oxygen source. The use of H 2 O 2 as an oxidant instead of H 2 O produces better results. 6 However, several water based processes have been developed which rely on the use of catalysts, e.g., pyridine and ammonia, 7-9 but these processes work only at low temperatures close to room temperature where metal oxide processes typically cannot be used for the multilayer growth. With ozone as an oxygen source, SiO 2 films have been deposited using aminosilane based precursors. 10,11 Ozone based processes can be combined with additional H 2 O exposures to facilitate Si precursor adsorption on hydroxyl sites. 12-14 Also Si 2 Cl 6 can be used with ozone, but the film growth requires higher deposition temperatures. 15 Despite the recent advances in ALD SiO 2 , there is still need for studies on alternative approach...

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“…Aminosilanes: TDMAS precursor, SiH[N(CH 3 ) 2 ] 3 .-TDMAS (in some reports-3DMAS) precursor was studied more frequently than other aminosilanes. 33,[38][39][40][41][42][43][44][45][46][48][49][50][51][52][53] The data summarized for TDMAS films are shown in Table X.…”

Section: Summary Of Revised Data For Aminosilanes and Heterocyclesmentioning

confidence: 99%

“…In a series of reports, [40][41][42][43] SiO 2 deposition was carried out in an ultrahigh-vacuum chamber on p-type (100) silicon prisms with dimensions of 0.5 × 10 × 40 mm with short sides cut at an angle of 45 degrees. This type of sample was required for examination using an infrared spectroscopy technique, called multiple internal reflection infrared absorption spectroscopy (MIR-IRAS).…”

Section: Summary Of Revised Data For Aminosilanes and Heterocyclesmentioning

confidence: 99%

Review—Atomic Layer Deposition of Silicon Dioxide Thin Films

Vasilyev

2021

ECS J. Solid State Sci. Technol.

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This article provides a critical review of published experimental data for silicon dioxide thin films deposited using cyclic technologies, including thermally-activated (TA) and plasma-enhanced (PE) Atomic Layer Deposition (ALD). The studied precursors (cyanates, silicon chlorides, oxygen-containing reactants, amino silanes and heterocyclic compounds) have been analyzed historically with a search depth of about 25 years. The focus is on the aspects of film growth. The aminosilane precursor group has been comprehensively analyzed for the TA-ALD and PE-ALD processes using ozone and oxygen as oxidants, respectively. The deposition rates are on the level of 0.05–0.15 nm per process cycle on average. The deposition rate of PE-ALD shows gradual decrease with temperature for all investigated precursors. For TA-ALD processes, the deposition temperature decreases and the deposition rates increase with a decrease in the number of amino groups in the silane molecule, and with an increase in the ozone dose. Problems and solutions to the problem of thin film conformality in ALD processes are analyzed. Assumptions are made about the possible prospects for investigating TA-ALD processes using monosilane, oxygen and nitrous oxide at low deposition temperatures.

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Low-temperature-atomic-layer-deposition of SiO2 with Tris(dimethylamino)Silane (TDMAS) and Ozone using Temperature Controlled Water Vapor Treatment

Cited by 10 publications

References 8 publications

High-Quality Thin SiO₂Films Grown by Atomic Layer Deposition Using Tris(dimethylamino)silane (TDMAS) and Ozone

High-Quality Thin SiO₂Films Grown by Atomic Layer Deposition Using Tris(dimethylamino)silane (TDMAS) and Ozone

Atomic Layer Deposition and Characterization of Aluminum Silicate Thin Films for Optical Applications

Review—Atomic Layer Deposition of Silicon Dioxide Thin Films

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Low-temperature-atomic-layer-deposition of SiO2 with Tris(dimethylamino)Silane (TDMAS) and Ozone using Temperature Controlled Water Vapor Treatment

Cited by 10 publications

References 8 publications

High-Quality Thin SiO2Films Grown by Atomic Layer Deposition Using Tris(dimethylamino)silane (TDMAS) and Ozone

High-Quality Thin SiO2Films Grown by Atomic Layer Deposition Using Tris(dimethylamino)silane (TDMAS) and Ozone

Atomic Layer Deposition and Characterization of Aluminum Silicate Thin Films for Optical Applications

Review—Atomic Layer Deposition of Silicon Dioxide Thin Films

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High-Quality Thin SiO₂Films Grown by Atomic Layer Deposition Using Tris(dimethylamino)silane (TDMAS) and Ozone

High-Quality Thin SiO₂Films Grown by Atomic Layer Deposition Using Tris(dimethylamino)silane (TDMAS) and Ozone