2011
DOI: 10.1016/j.tsf.2011.02.024
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Low-temperature atomic layer deposition of ZnO thin films: Control of crystallinity and orientation

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Cited by 99 publications
(69 citation statements)
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“…For 1,4-cyclohexanediol the melting and boiling points are 98 and 150 °C, respectively, being lower than those for HQ (172 and 285 °C), Hence it is important to note that crystalline ZnO thin films can be grown in an wide temperature range, and at temperatures considerably lower than the deposition temperature employed for the present ZnO:HQ superlattices. 51 …”
Section: Electronic Properties and Band Structure Engineeringmentioning
confidence: 99%
“…For 1,4-cyclohexanediol the melting and boiling points are 98 and 150 °C, respectively, being lower than those for HQ (172 and 285 °C), Hence it is important to note that crystalline ZnO thin films can be grown in an wide temperature range, and at temperatures considerably lower than the deposition temperature employed for the present ZnO:HQ superlattices. 51 …”
Section: Electronic Properties and Band Structure Engineeringmentioning
confidence: 99%
“…15 DEZ has high vapor pressure and reactivity with water, and the process is stable at temperatures even as low as room temperature; thus, ALD can be used to produce good quality ZnO thin films for polymers and other temperature sensitive substrates. 10,19,20 The ALD growth on polymers is strongly dependent on the nature of the polymer and on the ALD precursors. 11,21 For some polymers, reactive sites that can covalently bind the reactants at the initial stages of deposition are not available and the deposition initiates only after a certain number of cycles.…”
Section: Introductionmentioning
confidence: 99%
“…ZnO is of great interest thanks to the co-presence of both semiconducting and PE properties, together with the possibility of being easily synthesized in a lot of different micro/nano structures, like porous [38] and compact [39] thin films, micro/nanowires [40,41], nanorods [42], or nanobelts [43]. Among all of the aforementioned structures, the thin film one is of particular interest since many deposition techniques, like magnetron sputtering [44], pulsed-laser deposition [45], sol-gel [46], chemical vapor deposition [47], and atomic layer deposition [48] can be exploited for growing high-quality ZnO layers. Thin-film technologies have the main advantage of being fully compatible with semiconductor processing, and allow the deposition of ZnO on large-area substrates through repeatable and controllable processes, fully extendable to large-scale industrial production.…”
Section: Introductionmentioning
confidence: 99%