Low-temperature catalytic decomposition of hydrogen sulfide into hydrogen and diatomic gaseous sulfur

Startsev, A. N.

doi:10.1134/s002315841604011x

Cited by 20 publications

(28 citation statements)

References 31 publications

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“…An unexpected, unpredictable phenomenon was observed when hydrogen sulfide was passed through metal catalysts at room temperature: along with hydrogen, diatomic gaseous sulfur was discovered as a reaction product [7][8][9]20]. Pt (111) is ∼45 kcal/mol [22], while molecular hydrogen desorbs from the surface even at 230 K [23].…”

Section: H 2 S Decomposition On Metal Catalystsmentioning

confidence: 99%

“…Similar to the biological processes of H 2 S assimilation with sulfur bacteria in aqueous medium, the efficiency of H 2 S decomposition can be essentially improved (compared to the gas phase process) when solid catalyst is being immersed into a solvent capable of readily dissolving both hydrogen sulfide and the final products of the reaction (5) [20,40]. The scanning electron microscope images of white globular sulfur obtained from H 2 S on the metal catalyst immersed into water [20,24].…”

Section: H 2 S Decomposition On Metal Catalysts Under Layer Of Solventsmentioning

confidence: 99%

“…The scanning electron microscope images of white globular sulfur obtained from H 2 S on the metal catalyst immersed into water [20,24].…”

Section: H 2 S Decomposition On Metal Catalysts Under Layer Of Solventsmentioning

confidence: 99%

“…Decomposition of H 2 S occurs at room temperature with hydrogen evolution to the gas phase ( Figure 7) and sulfur accumulation in solution with efficiency towards H 2 S utilization of 97.9% (Table 2) [40]. Efficiency of H 2 S decomposition can be improved to 99.6% in the periodical regime (Table 3) [20], when, after solution saturation with H 2 S, the reaction is allowed to be completed in a closed system. No doubt, the possibilities of this process to achieve close to 100% efficiency of H 2 S decomposition is practically unlimited taking into account a wide range of choice of catalysts, solvents, regimes, etc.…”

Section: H 2 S Decomposition On Metal Catalysts Under Layer Of Solventsmentioning

confidence: 99%

“…Table 3: The periodical regime of hydrogen sulfide decomposition at room temperature over stainless steel chips placed in aqueous 5% MEA solution. Argon flow rate, 6 ml/min; H 2 S flow rate, 1.8 ml/min; catalyst weight, 2 g; solution volume, 150 ml [20]. After saturation with H 2 S, the reactor inlet and outlet were closed and overnight later the H 2 S feeding starts again.…”

Section: H 2 S Decomposition On Metal Catalysts Under Layer Of Solventsmentioning

confidence: 99%

See 4 more Smart Citations

The Reaction Mechanisms of H2S Decomposition into Hydrogen and Sulfur: Application of Classical and Biological Thermodynamics

An¹

2017

J Thermodyn Catal

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Section: H 2 S Decomposition On Metal Catalystsmentioning

confidence: 99%

Section: H 2 S Decomposition On Metal Catalysts Under Layer Of Solventsmentioning

confidence: 99%

“…The scanning electron microscope images of white globular sulfur obtained from H 2 S on the metal catalyst immersed into water [20,24].…”

Section: H 2 S Decomposition On Metal Catalysts Under Layer Of Solventsmentioning

confidence: 99%

Section: H 2 S Decomposition On Metal Catalysts Under Layer Of Solventsmentioning

confidence: 99%

Section: H 2 S Decomposition On Metal Catalysts Under Layer Of Solventsmentioning

confidence: 99%

See 3 more Smart Citations

The Reaction Mechanisms of H2S Decomposition into Hydrogen and Sulfur: Application of Classical and Biological Thermodynamics

An¹

2017

J Thermodyn Catal

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Laser‐Assisted Chemical Modification of Monolayer Transition Metal Dichalcogenides

Afaneh

Sahoo

Nobrega

et al. 2018

Adv Funct Materials

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Laser-assisted chemical modification is demonstrated on ultrathin transitionmetal dichalcogenides (TMDs), locally replacing selenium by sulfur atoms. The photoconversion process takes place in a controlled reactive gas environment and the heterogeneous reaction rates are monitored via in situ real-time Raman and photoluminescence spectroscopies. The spatially localized photoconversion results in a heterogeneous TMD structure, with chemically distinct domains, where the initial high crystalline quality of the film is not affected during the process. This has been further confirmed via transmission electron microscopy as well as Raman and photoluminescence spatial maps. This study demonstrates the potential of laser-assisted chemical conversion for on-demand synthesis of heterogeneous 2D materials with applications in nanodevices.The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adfm.201802949. reliable route to tailor the physicochemical properties of 2D materials. However, other than inducing evaporation, oxidation or doping, the potential of postgrowth laserassisted method is yet to be verified for in situ changing of the chemical composition of transition-metal dichalcogenides (TMDs), such as creating localized ternary alloys, or even completely replacing the chalcogen atoms. Here, we report the successful laser-induced chemical modification of suspended TMD monolayer films via local exchange of the chalcogen atoms: selenides to sulfides. With the proposed method, total or partial replacement of the chalcogen atoms was achieved, in both WSe 2 and MoSe 2 suspended films. The time constants associated with the different photochemical mechanisms involved in the conversion process were studied by in situ monitoring the Raman and photoluminescence spectra of the samples. Our results suggest that postgrowth laser-induced chemical modifications could be considered as an alternative route for the fabrication of spatially localized ternary alloys and in-plane 2D heterostructures in a controlled gas environment.

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A Hybrid Pulsed Laser Deposition Approach to Grow Thin Films of Chalcogenides

Surendran,

Singh,

Chen

et al. 2024

Advanced Materials

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Vapor‐pressure mismatched materials such as transition metal chalcogenides have emerged as electronic, photonic, and quantum materials with scientific and technological importance. However, epitaxial growth of vapor‐pressure mismatched materials are challenging due to differences in the reactivity, sticking coefficient, and surface adatom mobility of the mismatched species constituting the material, especially sulfur containing compounds. Here, we report a novel approach to grow chalcogenides – hybrid pulsed laser deposition – wherein an organosulfur precursor is used as a sulfur source in conjunction with pulsed laser deposition to regulate the stoichiometry of the deposited films. Epitaxial or textured thin films of sulfides with variety of structure and chemistry such as alkaline metal chalcogenides, main group chalcogenides, transition metal chalcogenides and chalcogenide perovskites are demonstrated, and structural characterization reveal improvement in thin film crystallinity, and surface and interface roughness compared to the state‐of‐the‐art. The growth method can be broadened to other vapor‐pressure mismatched chalcogenides such as selenides and tellurides. Our work opens up opportunities for broader epitaxial growth of chalcogenides, especially sulfide‐based thin film technological applications.This article is protected by copyright. All rights reserved

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Low-temperature catalytic decomposition of hydrogen sulfide into hydrogen and diatomic gaseous sulfur

Cited by 20 publications

References 31 publications

The Reaction Mechanisms of H2S Decomposition into Hydrogen and Sulfur: Application of Classical and Biological Thermodynamics

The Reaction Mechanisms of H2S Decomposition into Hydrogen and Sulfur: Application of Classical and Biological Thermodynamics

Laser‐Assisted Chemical Modification of Monolayer Transition Metal Dichalcogenides

A Hybrid Pulsed Laser Deposition Approach to Grow Thin Films of Chalcogenides

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