Low temperature characterization of effective mobility in uniaxially and biaxially strained N-MOSFETs

Lime, F.; Andrieu, F.; Derix, J.; Ghibaudo, G.; Bœuf, F.; Skotnicki, T.

doi:10.1109/essder.2005.1546700

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Cited by 4 publications

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“…Here we see that the strong EF reduction with decreasing T is not reproduced by the numerical model. In fact the simulated EF is rather constant, while the measured one shows a strong decrease for T < 200 K [22].…”

Section: Mobility Simulationsmentioning

confidence: 79%

On the electron mobility enhancement in biaxially strained Si MOSFETs

Driussi

Esseni

Selmi

et al. 2008

Solid-State Electronics

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Section: Mobility Simulationsmentioning

confidence: 79%

On the electron mobility enhancement in biaxially strained Si MOSFETs

Driussi

Esseni

Selmi

et al. 2008

Solid-State Electronics

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Low-temperature electrical characterization of fully depleted eXtra-strained SOI n-MOSFETs with TiN/HfO2 gate stack for the 32-nm technology node

2009

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On the Apparent Mobility in Nanometric n-MOSFETs

Zilli

Esseni

Palestri

et al. 2007

IEEE Electron Device Lett.

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This letter investigates the definition and determination\ud of mobility in nanometric metal–oxide–semiconductor transistors by means of multisubband Monte Carlo simulations. Our results clearly show that the transport in nano-MOSFETs, even for very small VDS, is far from being uniform and local. Consequently, the apparent mobility extracted from the experiments is\ud a channel-length-dependent quantity, which is only partly related to the uniform transport mobility. Our study comprises both the electrical and magnetoresistance mobility

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Low temperature characterization of effective mobility in uniaxially and biaxially strained N-MOSFETs

Cited by 4 publications

References 8 publications

On the electron mobility enhancement in biaxially strained Si MOSFETs

On the electron mobility enhancement in biaxially strained Si MOSFETs

Low-temperature electrical characterization of fully depleted eXtra-strained SOI n-MOSFETs with TiN/HfO2 gate stack for the 32-nm technology node

On the Apparent Mobility in Nanometric n-MOSFETs

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