Low temperature chemical vapor deposition of tungsten carbide for copper diffusion barriers

Sun, Yiyong; Lee, S. Y.; Lemonds, A. M.; Engbrecht, E. R.; Veldman, S.; Lozano, J.; White, J. M.; Ekerdt, John G.; Emesh, I.; Pfeifer, Klaus

doi:10.1016/s0040-6090(01)01367-0

Cited by 56 publications

(24 citation statements)

References 13 publications

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“…Firstly, Palmquist et al [24] used the same pressure but bias voltage was from -300 V to -350 V and, hardness was in the range (14)(15)(16)(17)(18)(19)(20)(21)(22)(23)(24)(25) GPa. This is less by 30-50 % compared to our values.…”

Section: Influence Of Deposition Parameters On Hardness and Indentatimentioning

confidence: 99%

“…WC layers have been deposited using chemical vapor deposition (CVD) [14][15][16][17][18][19][20][21][22] and physical vapor deposition (PVD) techniques [1][2][3][4][5][6][7][8][9][10][11][12][13][23][24][25][26][27][28][29][30][31]. Plasma enhanced CVD of tungsten hexacarbonyl has also been used for the deposition of WC/C layers at lower temperatures compared to those used in CVD techniques [15][16][17][18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

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THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS

Horňák¹

2018

Ceramics - Silikaty

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Section: Influence Of Deposition Parameters On Hardness and Indentatimentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS

Horňák¹

2018

Ceramics - Silikaty

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“…7,8 Depositions of WN x and WN x C y typically use ammonia and WCl 6 , WF 6 or W(CO) 6 as co-reactants. 4,[9][10][11][12] Despite being volatile, simple, and cost-effective, these chemistries generally require high deposition temperature, can introduce impurities, and can yield corrosive byproducts. To overcome these drawbacks, organometallic precursors have drawn considerable interest for metal-organic CVD (MOCVD).…”

mentioning

confidence: 99%

Low Temperature Deposition of WN_xC_yDiffusion Barriers Using WN(NEt₂)₃as a Single-Source Precursor

O’Donohue

McClain

Koley

et al. 2014

ECS J. Solid State Sci. Technol.

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Deposition of high quality WN x C y barrier films at very low temperature using aerosol-assisted chemical vapor deposition (AACVD) is reported. The single-source tungsten nitrido complex, WN(NEt 2 ) 3 , was designed to reduce the temperature required for WN x C y film deposition in an effort to minimize thermal stresses on neighboring layers in device structures. Using either pyridine or heptane as a solvent, WN x C y films were successfully deposited at temperatures from 100 to 650 • C. Film growth in pyridine and heptane at low temperature (100-350 • C and 125-550 • C, respectively) showed weak temperature dependence consistent with mass-transfer limited growth. At higher temperature the growth rate decreased rapidly with apparent activation energy of 0.375 ± 0.057 eV. The effects of solvent choice on film properties including composition, crystallinity, density, and surface roughness are discussed. Films deposited at low temperature (<350 • C) were highly smooth, amorphous and with a stoichiometry approaching W 2 NC; characteristics desirable for diffusion barrier applications. In Cu diffusion barrier tests, Cu (∼ 100 nm)/WN x C y (∼ 5.5 nm)/Si stacks subjected to a 500 Thin interlayer materials are increasingly being used in electronic devices to modify interfacial characteristics, including the film work function, chemical, thermal and charge transport rates, surface tension, and adhesion. Due to their low resistivity, appropriate work function, and thermal stability, refractory metal nitrides have been proposed for a number of applications, ranging from wafer level hermetic sealing 1 to field effect transistor (FET) gate electrodes. 2 In particular, the tungsten-based materials WN x and WN x C y have been considered as an alternative for both diffusion barriers 3,4 and gate electrodes 5 due to their low resistivity, appropriate and tunable work function (4.39-5.01 eV 6 ), thermal and mechanical stability, good barrier performance, and processing simplicity. 7,8 Depositions of WN x and WN x C y typically use ammonia and WCl 6 , WF 6 or W(CO) 6 as co-reactants. 4,[9][10][11][12] Despite being volatile, simple, and cost-effective, these chemistries generally require high deposition temperature, can introduce impurities, and can yield corrosive byproducts. To overcome these drawbacks, organometallic precursors have drawn considerable interest for metal-organic CVD (MOCVD). Typically, these complexes include nitrogen-bound moieties such as amido, imido, hydrazido, amidinate or guanidinate ligands, 13,14 and have been used in single-source or NH 3 /H 2 co-reacting conditions to deposit WN x . Unfortunately, many of these precursors still require relatively high deposition temperature (>350• C) 15-22 that can compromise contact level structures 2,23 and neighboring dielectrics. 24In addition, the development of ultra-low temperature CVD WN x C y has potential application to flexible and organic devices. Therefore, there is interest in developing organometallic precursors for ultra-low deposition temperature. We h...

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“…13 Ruthenium films were deposited in the CVD chamber with a base pressure of 6.67×10 -6 Pa. Ruthenium carbonyl precursor, Ru 3 (CO) 12 (purity 99.99%, Strem Chemicals), which was loaded in a metal-glass bubbler, was heated to 366 K. Using 10 standard cubic centimeters per minute (sccm) Ar carrier gas, the evaporated precursor was delivered into the CVD chamber through a gas line and shower head, both of which were heated 10 K higher than the bubbler temperature to avoid precursor condensation. The substrate was heated between 423 K and 593 K, and the chamber pressure was maintained at 6.67 Pa during film deposition.…”

Section: Experimental Methodsmentioning

confidence: 99%

Growth And Characterization of Ultrathin Metal Films For ULSI Interconnects

Shin

Sun

White

et al. 2005

AIP Conference Proceedings

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Low temperature chemical vapor deposition of tungsten carbide for copper diffusion barriers

Cited by 56 publications

References 13 publications

THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS

THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS

Low Temperature Deposition of WN_xC_yDiffusion Barriers Using WN(NEt₂)₃as a Single-Source Precursor

Growth And Characterization of Ultrathin Metal Films For ULSI Interconnects

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Low temperature chemical vapor deposition of tungsten carbide for copper diffusion barriers

Cited by 56 publications

References 13 publications

THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS

THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS

Low Temperature Deposition of WNxCyDiffusion Barriers Using WN(NEt2)3as a Single-Source Precursor

Growth And Characterization of Ultrathin Metal Films For ULSI Interconnects

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Low Temperature Deposition of WN_xC_yDiffusion Barriers Using WN(NEt₂)₃as a Single-Source Precursor