2016
DOI: 10.3390/en9060402
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Low-Temperature, Chemically Grown Titanium Oxide Thin Films with a High Hole Tunneling Rate for Si Solar Cells

Abstract: Abstract:In this paper, we propose a chemically grown titanium oxide (TiO 2 ) on Si to form a heterojunction for photovoltaic devices. The chemically grown TiO 2 does not block hole transport. Ultraviolet photoemission spectroscopy was used to study the band alignment. A substantial band offset at the TiO 2 /Si interface was observed. X-ray photoemission spectroscopy (XPS) revealed that the chemically grown TiO 2 is oxygen-deficient and contains numerous gap states. A multiple-trap-assisted tunneling (TAT) mod… Show more

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Cited by 7 publications
(9 citation statements)
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“…In particular, the use of TiO2 thin films has the great advantage of serving at the same time as passivation layers to prevent nanoPS from oxidation and to increase the open-circuit voltage. At the same time, the TiO2 thin films can be used as antireflective coatings [22].…”
Section: Introductionmentioning
confidence: 99%
“…In particular, the use of TiO2 thin films has the great advantage of serving at the same time as passivation layers to prevent nanoPS from oxidation and to increase the open-circuit voltage. At the same time, the TiO2 thin films can be used as antireflective coatings [22].…”
Section: Introductionmentioning
confidence: 99%
“…The titanium oxide with empty and filled band edges at 4 eV and 7.2 eV below the vacuum level, respectively. Furthermore, the Fermi energy of the LPD-TiO x layer is 4.2 eV [3]. The conduction band and valence edges are 3.9~4.0 and 5.6~5.7 eV for amorphous silicon (a-Si:H) adopted from literature [20,21].…”
Section: Resultsmentioning
confidence: 99%
“…After that, the front surface was passivated with photoresist for rear-side TiO x deposition. The TiO x was deposited in 8, 16, and 25 nm thicknesses by a LPD method, details of which were published previously [2,3]. (NH 4 ) 2 TiF 6 solution and H 3 BO 3 were used as precursors.…”
Section: Methodsmentioning
confidence: 99%
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“…The surface passivation of crystalline silicon (c-Si) solar cells can be improved using various materials such as SiO 2 [1][2][3][4][5][6], SiN x [7][8][9], Al 2 O 3 [10][11][12][13], TiO x [14][15][16], MoO x [17,18], and poly-Si [19][20][21][22]. In particular, Al 2 O 3 thin films are most widely used for boron-doped Si surfaces (or p + emitter surfaces) owing to the low surface recombination velocity (SRV) [10,11].…”
Section: Introductionmentioning
confidence: 99%