Low-temperature conductivity in CuGaS2 single crystals

Абдуллаев, Н. А.; Aliguliyeva, Kh. V.; Aliyeva, L. N.; Qasimoglu, I.; Kerimova, T. G.

doi:10.1134/s1063782615040028

Cited by 1 publication

(2 citation statements)

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“…Mobilities have been reported in the single crystal sample up to 15 cm 2 V –1 s –1 , with hole concentration 4 × 10 17 cm –3 . This study revealed activated carrier transport in the temperature range of 5–300 K, and an activated hopping mechanism at temperatures less than 100 K . CuGaS 2 has been predicted intrinsically p-type and not ambipolar, and no n-type reports have been found .…”

Section: Methodsmentioning

confidence: 70%

“…Mobilities have been reported in the single crystal sample up to 15 cm 2 V -1 s -1 , with hole concentration 4x10 17 cm -3 . This study revealed activated carrier transport in the temperature range of 5-300 K, and an activated hopping mechanism at temperatures less than 100 K. 253 CuGaS 2 has been predicted not n-type dopable, with extrinsic dopants from group II, group IV, and group VII. 254 We note that CuGaS 2 has also been recently investigated as an intermediate band solar cell (IBSC) absorber, with Fe Ga , Cr Ga , Ti, Ge Ga , and Sn Ga 255,256 that are deep defects.…”

Section: Cu(alga)ch2mentioning

confidence: 75%

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Wide Band Gap Chalcogenide Semiconductors

et al. 2020

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Wide band gap semiconductors are essential for today's electronic devices and energy applications due to their high optical transparency, as well as controllable carrier concentration and electrical conductivity. There are many categories of materials that can be defined as wide band gap semiconductors. The most intensively investigated are transparent conductive oxides (TCOs) such as tin-doped indium oxide (ITO) and amorphous In-Ga-Zn-O (IGZO) used in displays, carbides (e.g. SiC) and nitrides (e.g. GaN) used in power electronics, as well as emerging halides (e.g. g-CuI) and 2D electronic materials (e.g. graphene) used in various optoelectronic devices. Compared to these prominent materials families, chalcogen-based (Ch = S, Se, Te) wide band gap semiconductors are less heavily investigated but stand out due to their propensity for ptype doping, high mobilities, high valence band positions (i.e. low ionization potentials), and broad applications in electronic devices such as CdTe solar cells. This manuscript provides a review of wide band gap chalcogenide semiconductors. First, we outline general materials design parameters of high performing transparent conductors, as well as the theoretical and experimental underpinnings of the corresponding research methods. We proceed to summarize progress in wide band gap (E G > 2 eV) chalcogenide materials, such as II-VI MCh binaries, CuMCh 2 chalcopyrites, Cu 3 MCh 4 sulvanites, mixed anion layered CuMCh(O,F), and 2D materials, among others, and discuss computational predictions of potential new candidates in this family, highlighting their optical and electrical properties. We finally review applications of chalcogenide wide band gap semiconductors, e.g. photovoltaic and photoelectrochemical solar cells, transparent transistors, and light emitting diodes, that employ wide band gap chalcogenides as either an active or passive layer. By examining, categorizing, and discussing prospective directions in wide band gap chalcogenides, this review aims to inspire continued research on this emerging class of transparent conductors and to enable future innovations for optoelectronic devices.

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Section: Methodsmentioning

confidence: 70%