Low-temperature deposition of crystalline silicon nitride nanoparticles by hot-wire chemical vapor deposition

Kim, Chan-Soo; Youn, Woong-Kyu; Lee, Dong-Kwon; Seol, K.-S.; Hwang, Nong‐Moon

doi:10.1016/j.jcrysgro.2009.05.035

Cited by 8 publications

(6 citation statements)

References 34 publications

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“…The concept of the low-temperature deposition of a crystalline phase can be applied to systems other than silicon. Kim et al [191] successfully applied this concept to the deposition of crystalline silicon nitride on a silicon substrate at 700 • C using HWCVD as shown in figure 18. If silicon nitrides are precipitated near the hot wire, the temperature would be high enough for the nanoparticles to have a crystalline phase.…”

Section: Low-temperature Deposition Of Crystalline Phasementioning

confidence: 99%

Charged nanoparticles in thin film and nanostructure growth by chemical vapour deposition

Hwang¹,

Lee²

2010

J. Phys. D: Appl. Phys.

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The critical role of charged nanoclusters and nanoparticles in the growth of thin films and nanostructures by chemical vapour deposition (CVD) is reviewed. Advanced nanoparticle detection techniques have shown that charged gas-phase nuclei tend to be formed under conventional processing conditions of thin films and nanostructures by thermal, hot-wire and plasma CVD. The relation between gas-phase nuclei and thin film and nanostructure growth has not been clearly understood. In this review it will be shown that many films and nanostructures, which have been believed to grow by individual atoms or molecules, actually grow by the building blocks of such charged nuclei. This new growth mechanism was revealed in an attempt to explain many puzzling phenomena involved in the gas-activated diamond CVD process. Therefore, detailed thermodynamic and kinetic analyses will be made to draw the conclusion that the well-known phenomenon of deposition of less stable diamond with simultaneous etching of stable graphite should be an indication of diamond growth exclusively by charged nuclei formed in the gas phase. A similar logic was applied to the phenomenon of simultaneous deposition and etching of silicon, which also leads to the conclusion that silicon films by CVD should grow mainly by the building blocks of charged nuclei. This new mechanism of crystal growth appears to be general in many CVD and some physical vapour deposition (PVD) processes. In plasma CVD, this new mechanism has already been utilized to open a new field of plasma-aided nanofabrication.

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Section: Low-temperature Deposition Of Crystalline Phasementioning

confidence: 99%

Charged nanoparticles in thin film and nanostructure growth by chemical vapour deposition

Hwang¹,

Lee²

2010

J. Phys. D: Appl. Phys.

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“…Such a concept of two-step growth can be applied to other HWCVD systems for low temperature deposition of crystalline nanoparticles or films. On the basis of this new concept, Kim et al could successfully deposit crystalline silicon nitride at 700 °C by HWCVD.…”

Section: Introductionmentioning

confidence: 99%

Effect of Bias Applied to Hot Wires on Generation of Positive and Negative Charges during Silicon Hot-Wire Chemical Vapor Deposition

et al. 2009

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Hot-wire chemical vapor deposition of silicon films has been studied focusing on the generation of electric charge during the process. The currents measured 1.5 cm below the input and output positions, with respect to the DC power supply, of the hot wires at 2000 °C were +4 and −544 nA/cm2, respectively, and those 4.5 cm below the input and output positions were +3 and −64 nA/cm2, respectively. These data imply that both positive and negative charges are generated presumably by surface ionization of gas molecules on the hot wires, but an appreciable fraction of negative charges was attracted to the electric field around the hot wires, which have the input and output potentials of +18 and 0 V, respectively, provided by the DC power supply. The additional biases of +25 and −25 V applied to the hot wires produced +2.38 and −4.86 × 104 nA/cm2, respectively, 1.5 cm below the input position of the hot wires. The absolute value of the current measured under the negative bias is much larger than that under the positive bias. The additional bias on the hot wires significantly affected the amount of charges, which resulted in the change of microstructure, crystallinity, and growth rate of deposited films.

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“…41 The fact that charged nanoparticles tend to be generated in the gas phase and contribute to film growth during many CVD implies many potential applications. One example is the low temperature deposition of a crystalline phase, which turned out to be quite successful in the deposition of silicon nitride 42 and silicon 43 using HWCVD. In this case, crystalline nanoparticles are formed in the high temperature region near the hot wires, carried to the low temperature region, and deposited on the substrate at low temperature.…”

Section: Resultsmentioning

confidence: 99%

Generation of Charged Nanoparticles and Their Deposition Behavior under Alternating Electric Bias during Chemical Vapor Deposition of Silicon

et al. 2012

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The generation of charged nanoparticles was confirmed under typical conditions of the thin film deposition during the silicon chemical vapor deposition (CVD) process.To exert the electric force on these charged nanoparticles, the alternating current (ac) bias was applied to the stainless substrate holder during CVD. The bias frequency and voltage significantly affected the microstructure evolution and the growth rate. As the frequency at ±100 V was increased from 0.2 to 0.5, 1, and 5 Hz, the mass of the film became respectively 1.1, 2.2, 3.0, and 3.5 times compared with that of the film deposited under the zero bias. As the bias voltage at 1 Hz was increased from 0 to ±50, ±100, ±150, and ±200 V, the mass was increased respectively by 1.8, 3, 4.5, and 8.5 times.

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Low-temperature deposition of crystalline silicon nitride nanoparticles by hot-wire chemical vapor deposition

Cited by 8 publications

References 34 publications

Charged nanoparticles in thin film and nanostructure growth by chemical vapour deposition

Charged nanoparticles in thin film and nanostructure growth by chemical vapour deposition

Effect of Bias Applied to Hot Wires on Generation of Positive and Negative Charges during Silicon Hot-Wire Chemical Vapor Deposition

Generation of Charged Nanoparticles and Their Deposition Behavior under Alternating Electric Bias during Chemical Vapor Deposition of Silicon

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