Low temperature deposition of highly transparent and conducting Al-doped ZnO films by RF magnetron sputtering

Misra, Prashant; Ganeshan, V.; Agrawal, Nikhil

doi:10.1016/j.jallcom.2017.07.121

Cited by 65 publications

(33 citation statements)

References 47 publications

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“…[ 25 ] Mishra et al. [ 11 ] have also reported similar result on AZO thin films by sputtering method. The shifting was observed in 2θ values as compared to standard JCPDS for ZnO which reveals the appearance of macro residual stress in thin film.…”

Section: Resultsmentioning

confidence: 60%

“…It may be due to Burstein Moss effect which is as a result of increased carrier concentration with Al doping in ZnO. [ 11 ] The refractive index ( η ) and thin film thickness were obtained by transmittance spectra using Swanepoel method. [ 26 ]…”

Section: Resultsmentioning

confidence: 99%

“…[ 8–10 ] Among these, Al doping shows good chemical as well as mechanical stability with ZnO. [ 11 ] Many researchers have been working on different flexible substrates, such as polyester sulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), polyethylene‐terephthalate (PET). [ 12–14 ] Among these PET shows superior properties such as high transmittance in the visible spectral region, high mechanical stability, high flexibility, and also high heat resistance (200 °C) as compared to other flexible substrates.…”

Section: Introductionmentioning

confidence: 99%

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Impact of RF Sputtering Power on AZO Thin Films for Flexible Electro‐Optical Applications

Rana

Rajput

Pathak

et al. 2021

Crystal Research and Technology

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In the present work, fixed Al (2.5 wt%) doped zinc oxide (ZnO) thin films are fabricated at different radio frequency (RF) power on indium doped tin oxide‐coated polyethylene terephthalate substrate by sputtering techniques. From the X‐ray diffraction (XRD) results it has been observed that all thin films have polycrystalline nature with hexagonal structure. Stress of thin film calculated from XRD measurement is increased from −0.10 × 109 to 0.23 × 109 N m−2 with increase in RF sputtering power. The morphology analyzed by field electron microscopy is observed as irregular sphere for all samples. The estimated values of thickness are 440, 870, 913, and 1086 nm for the films grown at RF sputtering powers 130, 140, 150, and 160 W, respectively. On increasing the RF power from 130 to 160 W, the optical bandgap is decreased from 3.59 to 3.48 eV. The highest conductivity obtained is 2.43 × 102 S m−1 for the sample grown at sputtering power 160 W. The study reveals that there is an impact of sputtering power on the various properties of thin films grown on flexible substrates and these films have wide applications in flexible electro‐optical applications.

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Section: Resultsmentioning

confidence: 60%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Impact of RF Sputtering Power on AZO Thin Films for Flexible Electro‐Optical Applications

Rana

Rajput

Pathak

et al. 2021

Crystal Research and Technology

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“…Zinc oxide (ZnO) is an N-type semiconductor material with an energy gap of ~3.37 eV, which has a good transmittance in the visible light region. In addition to its abundant zinc content, low cost, good chemical stability, high transmittance, and stability in the near-infrared region, it can form a ZnO:Al 2 O 3 (AZO) film through the doping of an appropriate amount of group III Al ions, which can then be used as a transparent conductive layer [ 14 , 15 , 16 ]. Therefore, AZO is considered a potential material for TCLs.…”

Section: Introductionmentioning

confidence: 99%

Location-Optoelectronic Property Correlation in ZnO:Al Thin Film by RF Magnetron Sputtering and Its Photovoltaic Application

et al. 2021

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In this study, a radio-frequency magnetron sputter system was used to deposit Al2O3 doped ZnO (AZO) thin films at room temperature, and the soda lime glass (SLG) substrates were placed at different zones relative to the center of the sample holder under the target. The samples were then analyzed using an X-ray diffractometer, Hall-effect measurement system, UV-visible spectrophotometer, and X-ray photoelectron spectroscopy. It was found that the electrical, structural, and optical properties of AZO films strongly depend on the target racetrack. The AZO thin film grown at a location outside the racetrack not only has the most suitable figure of merit for transparent conductive films, but also retains the least residual stress, which makes it the most suitable candidate for use as a CZTSe transparent conductive layer. When applied to CZTSe solar cells, the photoelectric efficiency is 3.56%.

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“…ZnO is an intrinsic n-type semiconducting material, and to improve its electrical properties a dopant that provides charge carriers is used. Doping with Al has been employed by several authors [10][11][12][13][14][15][16] to reduce the electrical resistivity of ZnO, arriving at values of 230 µΩcm for depositions using DC magnetron sputtering at 270 °C. The thin film properties of AZO (ZnO:Al) depend strongly on the deposition parameters used, such as deposition time, temperature, total pressure in the chamber, applied power, substrate temperature and also the post-deposition annealing temperature 17,18 .…”

Section: Introductionmentioning

confidence: 99%

Growth Evolution of AZO thin Films Deposited by Magnetron Sputtering at Room Temperature

et al. 2021

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Thin AZO films were grown by RF magnetron sputtering for different deposition times in argon plasmas. Optical, structural, and morphological properties, together with elemental composition, were studied and correlated with the observed effects on the electrical properties and compared with two models of mobility scattering (ionized impurities and grain boundaries). The results suggest that the carrier density in the studied case is limited to below 15% owing to the low ionization efficiency caused by the formation of neutral impurities as homologous phases. While the spread in the mobility during the initial stages of film growth is strongly influenced by grain boundaries, in thicker films the limitation on ion efficiency becomes more significant.

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Low temperature deposition of highly transparent and conducting Al-doped ZnO films by RF magnetron sputtering

Cited by 65 publications

References 47 publications

Impact of RF Sputtering Power on AZO Thin Films for Flexible Electro‐Optical Applications

Impact of RF Sputtering Power on AZO Thin Films for Flexible Electro‐Optical Applications

Location-Optoelectronic Property Correlation in ZnO:Al Thin Film by RF Magnetron Sputtering and Its Photovoltaic Application

Growth Evolution of AZO thin Films Deposited by Magnetron Sputtering at Room Temperature

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