2007
DOI: 10.1557/proc-1007-s04-41
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Low Temperature Deposition of Metal Oxide Thin Films in Supercritical Carbon Dioxide Using Metal-organic Precursors

Abstract: A novel chemical route in thin film formation that includes the use of inorganic and organic peroxides and metal organic complexes soluble in supercritical carbon dioxide has been investigated for the deposition of alumina, titania and zirconia thin films at low temperatures (<150°C). The metal organic precursors used include: Al(acac) 3 , OTi(tmhd) 2 , and Zr(acac) 4 . Tert-butyl peroxide, and a 30% aqueous solution of hydrogen peroxide were used as oxidants. Depositions were carried out in a 25 ml hot wall r… Show more

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“…Therefore, these three titanium precursors with tmhd or acac ligands were chosen as potential precursors for TiO 2 -SCFD at low process temperatures. The thermal decomposition temperatures of the precursors were reported to be around 400 • C under vacuum conditions; [28][29][30] thus, a decomposition temperature below 400 • C in SCFD would prevent thermal damage on integrated logic circuits. Table I shows the solubilities of these precursors in scCO 2 and the corresponding properties of the deposited films.…”
Section: Resultsmentioning
confidence: 99%
“…Therefore, these three titanium precursors with tmhd or acac ligands were chosen as potential precursors for TiO 2 -SCFD at low process temperatures. The thermal decomposition temperatures of the precursors were reported to be around 400 • C under vacuum conditions; [28][29][30] thus, a decomposition temperature below 400 • C in SCFD would prevent thermal damage on integrated logic circuits. Table I shows the solubilities of these precursors in scCO 2 and the corresponding properties of the deposited films.…”
Section: Resultsmentioning
confidence: 99%