Low-Temperature Deposition of Silicon Oxide Film from the Reaction of Silicone Oil Vapor and Ozone Gas

Abstract

A compact, low-height prototype of a six-axis precise positioning stage for microfabrication h a s been developed. X and Y stage positioning requires nanometer positioning resolution and robustness against atmospheric turbulence. The stiffness and dead play of the traveling mechanism were improved by using rolling contact guides, and the positioning resolution was improved by using a iriction drive mechanism. Anaiog signais from a n opticai h e a r scaie are influenced little by atmospheric turbulence. Using these advantages of the optical linear scale and with a newlv develoDed Dositioning algorithm. one-nanometer resolution was obtained.

Study of the Influence of Temperature on the Deposition of SiO₂ Films from Reaction of Silicone Oil Vapor and Ozone Gas

“…The deposition rate was too low, e.g., 1 nm/min at 200 ºC for the case of without organic solution [33]. But in our study, the deposition rate was 11.85 nm/min at 200 ºC by using organic solution.…”

“…They were chemically cleaned by hot ammoniacal solution (NH 4 In our experimental process,O 3 is decomposed to O 2 and reactive O shown in equation (1). This decomposition is dependent on deposition temperature [33,34]. Oliver R.Wulf& Richard C. Tolman specified the range of decomposition temperature that is 148 ºC to 179 ºC [34].Since the O is very chemically active, the overall reaction of the process of reactive oxygen and SO is shown in equation (2).…”

Study on residual OH content in low-temperature Si oxide films after in situ post-deposition heating (PDH)

“…13) However, using TCE for the SiO x film deposition with SO + O 3 , the deposited films still contain a large number of OH bonds, which have been reported to lead to the serious problems of high leakage current and low breakdown voltage. 8,[14][15][16] Generally, low-temperature SiO x films prepared by CVD methods with organic silicon sources, such as TEOS, are more likely to contain a large number of OH bonds when no special treatment is carried out, e.g. postdeposition annealing.…”

“…lower leakage current and higher breakdown voltage. 8,17,18) However, high-temperature annealing may lose some effectiveness of the lowtemperature deposition process. Therefore, in order to reduce the number of residual OH bonds before removing a deposited film from the deposition chamber, we treated a deposited SiO x film by in-site post-deposition heating (PDH) and compared the OH content with that of a non-PDH(NPDH)-treated film.…”

“…[3][4][5] On the other hand, we previously reported on the low-temperature deposition of SiO x films using silicone oil {SO: dimethylpoly-siloxane (CH 3 ) 3 SiO[(CH 3 ) 2 SiO] 10 Si(CH 3 ) 3 } vapor as a deposition source and ozone (O 3 ) gas at temperatures of 200 °C-350 °C at atmospheric pressure without vacuum or pumping systems. 7,8) SO has advantages over TEOS; the price per unit volume of SO is lower than that of TEOS by about one order, and SO is not only markedly thermally stable, but also a safe material, whereas TEOS is toxic especially to the human eye and throat. 9) In addition, in order to increase the rate (less than 5 nm min −1 ) of SiO x film deposition, by changing SO to decamethylcyclopenta-siloxane, C 10 H 30 O 5 Si 5 , we have reported that adding some amount of trichloroethylene (C 2 HCl 3 ; TCE) vapor markedly increases the deposition rate to more than three times that without TCE during deposition in combination with SO and O 3 at deposition temperatures lower than 200 °C.…”