Low-temperature deposition of zirconium and hafnium boride films by thermal decomposition of the metal borohydrides (<i>M</i>[BH4]4)

Wayda, Andrea L.; Schneemeyer, Lynn; Opila, R. L.

doi:10.1063/1.100603

Cited by 62 publications

(38 citation statements)

References 15 publications

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“…The unimolecular precursor Zr(BH 4 ) 4 has a vapor pressure of B8 Torr at room temperature, making it particularly suitable for gas-source molecular beam epitaxy (GSMBE) or ultrahigh vacuum chemical vapor deposition (UHV-CVD) applications [6,7]. The flow of the Zr(BH 4 ) 4 vapor was adjusted by a leak valve and delivered via a glass inlet tube which passed through the apertures in the objective lens of the LEEM.…”

Section: Methodsmentioning

confidence: 99%

Nucleation and growth of epitaxial ZrB2(0001) on Si(111)

Chizmeshya

Tolle

et al. 2004

Journal of Crystal Growth

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Section: Methodsmentioning

confidence: 99%

Nucleation and growth of epitaxial ZrB2(0001) on Si(111)

Chizmeshya

Tolle

et al. 2004

Journal of Crystal Growth

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“…ZrB2 thin films have been grown by CVD [6,7,11,[18][19][20][21][22][23][24], pulsed laser deposition [25,26], e-beam deposition [26][27][28], sputtering of reactive multilayers [29], and sputtering from a compound source [30][31][32][33][34][35][36][37][38][39][40][41][42][43].…”

Section: Methods For Thin Film Synthesismentioning

confidence: 99%

ZrB2 Thin Films : Growth and Characterization

Tengdelius¹

2016

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Zirconium diboride, ZrB2, is a ceramic material with bulk properties such as high melting point (3245 °C), high hardness (23 GPa), and low resistivity (~8 µΩcm). Thin film growth of ZrB2 using physical vapor deposition has suffered from problems with films deviating from stoichiometry and with high levels of contaminants, especially high oxygen content. The homogeneity range of ZrB2 is very narrow, and consequently it is vital to achieve the correct stoichiometry to grow films with high crystalline order.This thesis describes a direct current magnetron sputtering process to grow stoichiometric ZrB2 thin films with a low degree of impurities. Growth of epitaxial ZrB2 films was achieved on 4H-SiC(0001), Si(111) and Al2O3(0001) substrates. The effect of deposition temperature and power applied on the sputtering target was investigated and showed that high power density (8.77 Wcm -2 ) and high temperature (900 °C) resulted in films with the best composition and the highest crystal quality. ZrB2 films on GaN(0001) templates exhibit an amorphous layer at the film-substrate interface and the resulting films are either polycrystalline or textured.Resistivity measurements showed that the ZrB2 thin films exhibit typical resistivity values of ~100-250 µΩcm and that the resistivity decreased with increasing deposition temperature.Nanoindentation was applied to assess the mechanical properties of the films. The epitaxial ZrB2 films exhibit high elastic recovery and a hardness of ~45-50 GPa, twice as high as the literature bulk value. In addition, evaluation of the mechanical properties was performed at high temperatures of up to 600 °C and showed that the epitaxial films retained a higher hardness, compared to textured ZrB2 films and bulk, also at these temperatures. Forskningsfältet tunnfilmsfysik handlar om att utveckla och förstå nya och redan existerande tunnfilmsmaterial. En tunn film kan vara allt från bara ett atomlager tjockt till ~1 mikrometer tjock. III Populärvetenskaplig sammanfattningDe flesta filmer som jag gjort är ungefär 400 nanometer tjocka. Som jämförelse kan nämnas att ett hårstrås radie är ungefär hundra gånger större än tjockleken på mina filmer.En del av forskningen inom tunnfilmsfysik är riktad mot att lösa ett specifikt problem för en specifik tillämpning. Det kan t.ex. innebära utveckling av ett tunnfilmsmaterial för att förlänga livstiden för verktyg inom metallbearbetningsindustrin. Men en stor del av forskningen är även så kallad grundforskning där syftet med forskningen är att lära sig att förstå så mycket som möjligt om ett material för att i ett senare skede tillämpa den kunskapen för att lösa specifika problem. Min During the course of research underlying this thesis, I was enrolled in Agora Materiae, a multidisciplinary doctoral program at Linköping University, Sweden. IX Acknowledgments I would like to express my deepest thanks:To my supervisor Hans. Thank you for giving me this opportunity, for your support, for generously giving of your time, and for sharing your knowledge. We ha...

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“…Transition Metal Borides: As metal-rich borides with isolated boron atoms constitute only a small fraction of known binary transition metal borides 22 , our secondary objective was to explore boron-rich metallaboranes. Recently two accounts of the utilization of metal borohydrides for the production of refractory borides have appeared 3,6 . Our initial work, in collaboration with Gaines at Wisconsin, has been carried out on B 5 H1OMn(CO)3 which is a volatile liquid metallaborane that can be prepared in good yield in a metal catalyzed reaction from B 5 H9, H 2 , and Mn 2 (CO) 10 23 .…”

Section: Methodsmentioning

confidence: 99%

Metallaboranes as Precursors to Metallic Glasses

Fehlner¹

1989

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Low-temperature deposition of zirconium and hafnium boride films by thermal decomposition of the metal borohydrides (M[BH4]4)

Cited by 62 publications

References 15 publications

Nucleation and growth of epitaxial ZrB2(0001) on Si(111)

Nucleation and growth of epitaxial ZrB2(0001) on Si(111)

ZrB2 Thin Films : Growth and Characterization

Metallaboranes as Precursors to Metallic Glasses

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