Low-temperature electrical resistivity of antiferromagnetic Ce4Pt12Sn25

Lorenzer, K. A.; Inamdar, Manjusha; Shafeek, Lubuna; Prokofiev, A.; Paschen, S.

doi:10.1088/1742-6596/391/1/012036

Cited by 4 publications

(7 citation statements)

References 9 publications

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“…According to our calculation we observe a correlation between a and the resistivity, i.e. as a decreases we observe a dramatic increase in resistivity ρ. displays a sharp change in R around 15 K which can be related to the formation or suppression of scattering processes which decrease the resistance for T < 15 K. A similar effect is also observed in sample B below 25 K. It is known from some antiferromagnetic (AF) materials, that resistance diminishes below the Néel temperature T N [49][50][51]. For single-crystalline Na 2 IrO 3 , literature reports on the formation of an AF phase with a Néel temperature T N between 13.4 and 18.1K [11,[19][20][21].…”

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confidence: 52%

“…In addition, sample A displays a sharp change in R around 15 K which can be related to the formation or suppression of scattering processes which decrease the resistance for T < 15 K. A similar effect is also observed in sample B below 25 K. It is known from some antiferromagnetic (AF) materials that resistance diminishes below the Néel temperature T N . [45][46][47] For single-crystalline Na 2 IrO 3 , literature reports on the formation of an AF phase with a Néel temperature T N between 13.4 and 18.1 K. 11,[19][20][21] We suggest that the decrease of the resistance below 15 and 25 K in our investigated samples A and B, respectively, is a consequence of the AF phase formation, possibly with a reduction in spin scattering. For sample B we further observe that the low-temperature resistance (T < 25 K) can also be well described by the Mott-VRH dependence, but with a much smaller slope of T 1/4 0 = 3.4 K 1/4 compared to the high-temperature range.…”

Section: (D)mentioning

confidence: 53%

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Mott variable-range hopping and weak antilocalization effect in heteroepitaxial Na2IrO3thin films

et al. 2013

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Iridate thin films are a prerequisite for any application utilizing their cooperative effects resulting from the interplay of strong spin-orbit coupling and electronic correlations. Here, heteroepitaxial Na 2 IrO 3 thin films with (001) out-of-plane crystalline orientation and well-defined in-plane epitaxial relationship are presented on various oxide substrates. Resistivity is dominated by a three-dimensional variable-range hopping mechanism in a large temperature range between 300 K and 40 K. Optical experiments show the onset of a small optical gap E go ≈ 200 meV and a splitting of the Ir 5d-t 2g manifold. Positive magnetoresistance below 3 T and 25 K shows signatures of a weak antilocalization effect.Transition-metal oxides containing 5d iridium ions allow for the observation of novel cooperative effects resulting from an interplay between strong spin-orbit coupling and electronic correlations. These iridates are promising candidates for high-T C superconductors, 1 spin liquids, 2-4 a novel J eff = 1/2 Mottinsulating ground state, 5,6 and topological insulators. 7-10 A rather recently studied iridate is the Mott-insulating layered compound Na 2 IrO 3 where edge-sharing IrO 6 octahedra form a honeycomb lattice within each Na 2 IrO 3 layer. 11 Theoretical studies of magnetic interactions in model Hamiltonians of A 2 BO 3 -type compounds 12,13 suggest spin liquid behavior in Na 2 IrO 3 . On the other hand, tight-binding model analyses and first-principles band structure calculations, 7,10,14 as well as density-matrix renormalization group calculations, 15 suggest Na 2 IrO 3 as a possible topological insulator. Both states of matter, however, promise possible application in fault-tolerant quantum computation. [16][17][18] Experimental efforts on Na 2 IrO 3 were so far limited to powder and single-crystalline samples. 11,19-22 Initially, from x-ray diffraction experiments a monoclinic C2/c unit cell for Na 2 IrO 3 was suggested. 11 More recent experiments however are more consistent with a C2/m unit cell. 19,20 Later experiments also confirm the presence of trigonal distortions of the IrO 6 octahedra and that structural disorder, i.e., stacking faults and Na/Ir site mixings, is common. The compound furthermore exhibits frustrated antiferromagnetic order below T N = 15 K with moments ordered collinearly in a zigzag pattern. 19-21 Furthermore, single-crystalline Na 2 IrO 3 has a small band gap. 22 Its temperature-dependent in-plane dc electrical resistivity follows a ρ ∝ exp[(T 0 /T ) 1/4 ] behavior between 100 and 300 K. 11 Such a ρ(T ) dependence is usually associated with three-dimensional Mott variable range hopping 23 of localized carriers.In this paper, we report on heteroepitaxial Na 2 IrO 3 thin films grown on (001) YAlO 3 , a-sapphire, and c-sapphire. Deposition of Na 2 IrO 3 thin films ultimately is a step towards future device applications of this material. Our heteroepitaxial films exhibit a clear epitaxial relation and an excellent (001) out-of-plane orientation. In magnetoresistance measurements we obs...

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confidence: 52%

Section: (D)mentioning

confidence: 53%

Mott variable-range hopping and weak antilocalization effect in heteroepitaxial Na2IrO3thin films

et al. 2013

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“…Such a response would be quite logical if the ground state is ferromagnetic and the Curie temperature, T C , is enhanced with magnetic field; however, the negative sign of Θ CW implies that the magnetic exchange interactions have an antiferromagnetic rather than ferromagnetic character. The compound Ce 4 Pt 12 Sn 25 , with Ce-Ce separation of 6.14 Å and a weak antiferromagnetic ground state with = T 0.19 N K [28], exhibits similar curvature in its electrical resistivity that may be associated with a spin-wave gap that opens at temperatures much greater than T N [29]. It is possible that a similar scenario could play a role in the compounds CeT 2 Cd 20 (T = Ni, Pd) if a spin-wave gap opened and was strongly field dependent.…”

Section: δC Tmentioning

confidence: 99%

Weak hybridization and isolated localized magnetic moments in the compounds CeT₂Cd₂₀(T = Ni, Pd)

White¹,

Yazici²,

Ho³

et al. 2015

J. Phys.: Condens. Matter

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We report the physical properties of single crystals of the compounds CeT2Cd20 (T = Ni, Pd) that were grown in a molten Cd flux. Large separations of ∼6.7-6.8 Å between Ce ions favor the localized magnetic moments that are observed in measurements of the magnetization. The strength of the Ruderman-Kittel-Kasuya-Yosida magnetic exchange interaction between the localized moments is severely limited by the large Ce-Ce separations and by weak hybridization between localized Ce 4 f and itinerant electron states. Measurements of electrical resistivity performed down to 0.138 K were unable to observe evidence for the emergence of magnetic order; however, magnetically-ordered ground states with very low transition temperatures are still expected in these compounds despite the isolated nature of the localized magnetic moments. Such a fragile magnetic order could be highly susceptible to tuning via applied pressure, but evidence for the emergence of magnetic order has not been observed so far in our measurements up to 2.5 GPa.

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“…The compound Ce 4 Pt 12 Sn 25 orders antiferromagnetically at T N = 0.19 K but only 50% of the theoretically expected value of the entropy S mag = R ln 2 is released at T N and the full entropy is not recovered until 1.9 K [3]. This shift of entropy to higher temperatures is reflected in an appreciable spin-disorder scattering contribution to the electrical resistivity ρ mag up to 1.9 K. This is anomalous in the sense that none of the consiedered effects (frustration, Kondo interaction, short range order, formation of a spin gap) can fully account for it [3,4]. Recently, the suppression of the antiferromagnetic phase with magnetic field was reported [4,5].…”

Section: Introductionmentioning

confidence: 99%

“…This shift of entropy to higher temperatures is reflected in an appreciable spin-disorder scattering contribution to the electrical resistivity ρ mag up to 1.9 K. This is anomalous in the sense that none of the consiedered effects (frustration, Kondo interaction, short range order, formation of a spin gap) can fully account for it [3,4]. Recently, the suppression of the antiferromagnetic phase with magnetic field was reported [4,5].…”

Section: Introductionmentioning

confidence: 99%

Structural, Magnetic and Transport Properties of the Rare-Earth Cage Compound Ce4Pd12Sn25

Lorenzer

Simpson

Kubel

et al. 2012

SSP

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Here we present and discuss structural, magnetic and transport properties of the new ternary cage compound Ce4Pd12Sn25. The isostructural Pt analogue, Ce4Pt12Sn25 has previously been characterized as a metallic Kondo lattice system with a very low Kondo temperature TK ~ 0.25 K and an antiferromagnetic ground state with a Neel temperature TN =0.19 K. In contrast to the expectations that the smaller unit cell volume of Ce4Pd12Sn25 compared to Ce4Pt12Sn25 will weaken the magnetism and tune the system closer to a magnetic instability, we found evidence for a phase transition at a higher temperature Tmag=0.265 K.

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Low-temperature electrical resistivity of antiferromagnetic Ce₄Pt₁₂Sn₂₅

Cited by 4 publications

References 9 publications

Mott variable-range hopping and weak antilocalization effect in heteroepitaxial Na2IrO3thin films

Mott variable-range hopping and weak antilocalization effect in heteroepitaxial Na2IrO3thin films

Weak hybridization and isolated localized magnetic moments in the compounds CeT₂Cd₂₀(T = Ni, Pd)

Structural, Magnetic and Transport Properties of the Rare-Earth Cage Compound Ce<sub>4</sub>Pd<sub>12</sub>Sn<sub>25</sub>

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Low-temperature electrical resistivity of antiferromagnetic Ce4Pt12Sn25

Cited by 4 publications

References 9 publications

Mott variable-range hopping and weak antilocalization effect in heteroepitaxial Na2IrO3thin films

Mott variable-range hopping and weak antilocalization effect in heteroepitaxial Na2IrO3thin films

Weak hybridization and isolated localized magnetic moments in the compounds CeT2Cd20(T = Ni, Pd)

Structural, Magnetic and Transport Properties of the Rare-Earth Cage Compound Ce<sub>4</sub>Pd<sub>12</sub>Sn<sub>25</sub>

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Low-temperature electrical resistivity of antiferromagnetic Ce₄Pt₁₂Sn₂₅

Weak hybridization and isolated localized magnetic moments in the compounds CeT₂Cd₂₀(T = Ni, Pd)