2006
DOI: 10.1016/j.physb.2006.01.517
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Low-temperature electrical transport properties of disordered Zr100−xSnx alloys

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Cited by 5 publications
(3 citation statements)
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“…The experimental and theoretical values obtained for m as well as the other parameters given in Table II are of the same order of magnitude as in a variety of disordered systems. [27][28][29][30][31] Here, it is interesting to note that EEI effects dominate the electron transport even at room temperature in Sb-doped films in contrast to expectations. Even if we fit Eq.…”
Section: Resultsmentioning
confidence: 69%
“…The experimental and theoretical values obtained for m as well as the other parameters given in Table II are of the same order of magnitude as in a variety of disordered systems. [27][28][29][30][31] Here, it is interesting to note that EEI effects dominate the electron transport even at room temperature in Sb-doped films in contrast to expectations. Even if we fit Eq.…”
Section: Resultsmentioning
confidence: 69%
“…Higher-Order Elastic Constants. The unit cell parameters "a" (basal plane parameter) and "p" (axial ratio) for Zr 100−X Sn X alloys are 3.17Å, 3.23Å, 3.21Å, 3.21Å, and 1.622, 1.599, 1.603, 1.600, respectively, [23]. The values of m and n for chosen materials are 6 and 7.…”
Section: Resultsmentioning
confidence: 99%
“…The coefficients of d and e obtained from fits are À6.61 Â 10 À5 mX À1 mm À1 K À1/2 and 1.04 mX mm/K 1/2 , respectively. According to report [24] the e can be expressed as…”
Section: Resultsmentioning
confidence: 99%