Low-temperature epitaxial growth of undoped and n-doped silicon by photochemical vapor deposition using SiH4/SiH2Cl2/H2/PH3 mixtures

Alonso, J. C.; Oshima, Tairo; Yamada, Akira; Konagai, Makoto; Takahashi, Kiyoshi

doi:10.1016/0040-6090(94)90244-5

Cited by 5 publications

(4 citation statements)

References 24 publications

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“…The deposition rate for the intrinsic Si film reached 4.0 nm/s, which is substantially higher than that of many other MWPECVD processes using SiH 4 /H 2 or SiH 2 Cl 2 /H 2 as precursor. , On the other hand, the deposition rate of both P- and B-doped Si films increased linearly with the increase in the number of solid doping targets after adopting the SSSDS process. Maximum deposition rates of 4.66 and 4.45 nm/s obtained in the present study for the conditions P(12) and B(12), respectively, are much higher than those of other CVD processes using SiH 4 as precursors with various gaseous doping sources. − Enhancement of the deposition rate for the doped Si film may be attributed to the incorporation of dopants in the Si film. Moreover, the morphology markedly changed from columnar morphology to featureless noncolumnar when the number of solid doping targets increased.…”

Section: Resultsmentioning

confidence: 49%

“…In such a process, a decomposed Si-based precursor is reacted with the doping source through a series of gas-phase reactions in a range of deposition methods to synthesize doped Si film. These methods include plasma-enhanced chemical vapor deposition (PECVD), hot-wire chemical vapor deposition (HWCVD), and photochemical vapor deposition (photo-CVD). − Dopants for acceptor impurities belong group III (B) and donor impurities belong group V (P) are extensively used to form p -type and n -type characters, respectively. Various doping sources for B include diborane (B 2 H 6 ), trimethylboron (B(CH 3 ) 3 ), and boron trifluoride (BF 3 ), and sources for P include phosphane (PH 3 ) and phosphorus trichloride (PCl 3 ) .…”

Section: Introductionmentioning

confidence: 99%

“…These methods include plasma-enhanced chemical vapor deposition (PECVD), hot-wire chemical vapor deposition (HWCVD), and photochemical vapor deposition (photo-CVD). − Dopants for acceptor impurities belong group III (B) and donor impurities belong group V (P) are extensively used to form p -type and n -type characters, respectively. Various doping sources for B include diborane (B 2 H 6 ), trimethylboron (B(CH 3 ) 3 ), and boron trifluoride (BF 3 ), and sources for P include phosphane (PH 3 ) and phosphorus trichloride (PCl 3 ) . However, the most commonly used gaseous doping sources for B or P are explosive, highly hazardous, and difficult to store.…”

Section: Introductionmentioning

confidence: 99%

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Flexible Solar Cells Using Doped Crystalline Si Film Prepared by Self-Biased Sputtering Solid Doping Source in SiCl₄/H₂ Microwave Plasma

Hsieh

Lee

Tai

2016

ACS Appl. Mater. Interfaces

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We developed an innovative approach of self-biased sputtering solid doping source process to synthesize doped crystalline Si film on flexible polyimide (PI) substrate via microwave-plasma-enhanced chemical vapor deposition (MWPECVD) using SiCl4/H2 mixture. In this process, P dopants or B dopants were introduced by sputtering the solid doping target through charged-ion bombardment in situ during high-density microwave plasma deposition. A strong correlation between the number of solid doping targets and the characteristics of doped Si films was investigated in detail. The results show that both P- and B-doped crystalline Si films possessed a dense columnar structure, and the crystallinity of these structures decreased with increasing the number of solid doping targets. The films also exhibited a high growth rate (>4.0 nm/s). Under optimal conditions, the maximum conductivity and corresponding carrier concentration were, respectively, 9.48 S/cm and 1.2 × 10(20) cm(-3) for P-doped Si film and 7.83 S/cm and 1.5 × 10(20) cm(-3) for B-doped Si film. Such high values indicate that the incorporation of dopant with high doping efficiency (around 40%) into the Si films was achieved regardless of solid doping sources used. Furthermore, a flexible crystalline Si film solar cell with substrate configuration was fabricated by using the structure of PI/Mo film/n-type Si film/i-type Si film/p-type Si film/ITO film/Al grid film. The best solar cell performance was obtained with an open-circuit voltage of 0.54 V, short-circuit current density of 19.18 mA/cm(2), fill factor of 0.65, and high energy conversion of 6.75%. According to the results of bending tests, the critical radius of curvature (RC) was 12.4 mm, and the loss of efficiency was less than 1% after the cyclic bending test for 100 cycles at RC, indicating superior flexibility and bending durability. These results represent important steps toward a low-cost approach to high-performance flexible crystalline Si film-based photovoltaic devices.

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Section: Resultsmentioning

confidence: 49%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Flexible Solar Cells Using Doped Crystalline Si Film Prepared by Self-Biased Sputtering Solid Doping Source in SiCl₄/H₂ Microwave Plasma

Hsieh

Lee

Tai

2016

ACS Appl. Mater. Interfaces

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“…Epitaxial growth at very low temperatures below 200°C has been achieved using photoassisted CVD. 3 Here, however, defects and dislocations have not yet been effectively suppressed.…”

Section: Introductionmentioning

confidence: 97%

Ion beam epitaxy of silicon films in an ultrahigh vacuum using a sputtering-type metal ion source

Matsuoka

Tohno

1995

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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High-performance flexible electron field emitters fabricated from doped crystalline Si pillar films on polymer substrates

et al. 2016

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Low-temperature epitaxial growth of undoped and n-doped silicon by photochemical vapor deposition using SiH4/SiH2Cl2/H2/PH3 mixtures

Cited by 5 publications

References 24 publications

Flexible Solar Cells Using Doped Crystalline Si Film Prepared by Self-Biased Sputtering Solid Doping Source in SiCl₄/H₂ Microwave Plasma

Flexible Solar Cells Using Doped Crystalline Si Film Prepared by Self-Biased Sputtering Solid Doping Source in SiCl₄/H₂ Microwave Plasma

Ion beam epitaxy of silicon films in an ultrahigh vacuum using a sputtering-type metal ion source

High-performance flexible electron field emitters fabricated from doped crystalline Si pillar films on polymer substrates

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Low-temperature epitaxial growth of undoped and n-doped silicon by photochemical vapor deposition using SiH4/SiH2Cl2/H2/PH3 mixtures

Cited by 5 publications

References 24 publications

Flexible Solar Cells Using Doped Crystalline Si Film Prepared by Self-Biased Sputtering Solid Doping Source in SiCl4/H2 Microwave Plasma

Flexible Solar Cells Using Doped Crystalline Si Film Prepared by Self-Biased Sputtering Solid Doping Source in SiCl4/H2 Microwave Plasma

Ion beam epitaxy of silicon films in an ultrahigh vacuum using a sputtering-type metal ion source

High-performance flexible electron field emitters fabricated from doped crystalline Si pillar films on polymer substrates

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Product

Resources

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Flexible Solar Cells Using Doped Crystalline Si Film Prepared by Self-Biased Sputtering Solid Doping Source in SiCl₄/H₂ Microwave Plasma

Flexible Solar Cells Using Doped Crystalline Si Film Prepared by Self-Biased Sputtering Solid Doping Source in SiCl₄/H₂ Microwave Plasma