Low‐Temperature Fabrication and Enhanced Ferro‐ and Piezoelectric Properties of Bi_3.7Nd_0.3Ti₃O₁₂ Films on Indium TinOxide/Glass Substrates

Abstract

Bi3.7Nd0.3Ti3O12 (BNT0.3) films were fabricated on indium tin oxide/glass substrates using a metal organic decomposition method at temperatures ranging from 500° to 650°C. A predominantly (100)‐oriented BNT0.3 film can be obtained even at 550°C. The growth mode of the predominantly (100)‐oriented BNT0.3 films fabricated by the sequential layer annealing method was discussed based on the structure evolution with the annealing temperature and the film thickness. The largest values of the remanent polarization and piezoresponse are observed in the BNT0.3 film annealed at 650°C, which can be ascribed to the grain growth and the release of the in‐plane residue tension stress.

In-situ post-annealing technique for improving piezoelectricity and ferroelectricity of Li-doped ZnO thin films prepared by radio frequency magnetron sputtering system

“…This evolution can be ascribed to the release of the in-plane residue tension stress rather than the epitaxial stress. 22 The highest d 33 is 22.85 pm/V as annealed at 600 C, which is about three times larger than the theoretical value of pure ZnO. In the resistivity measurement, four corner points of each film were selected.…”

Multiferroic properties of Bi3.15Nd0.85Ti3O12–CoFe2O4 bilayer films derived by a sol–gel processing

“…The calculated values of˛a are listed in Table 1, which shows that˛a increase a bit with the thickness fraction, x, of the BNT layers for the xBNT-(1 − x)CFO bilayer films, as observed previously [25].…”

Low-temperature fabrication and properties of the highly oriented Bi3.15Nd0.85Ti3O12 thin films deposited on different substrates

“…(1 1 7) on both substrates. Similar to Bi 3.7 Nd 0.3 Ti 3 O 12 film [18], the relative intensities of (1 0 0) and (1 1 7) peaks for BNdT film annealed at 650 • C are high due to the grain growth and competitive growth. Because the nucleation activation energy for BNdT decreases caused by the BSTMn buffer layer, the relative intensity of (2 0 0) peak [I (2 0 0) /I ( 1 1 7) ] for BNdT on BSTMn is higher than on Pt.…”

“…In the previous work, we have prepared variously oriented Bi 3.15 Nd 0.85 Ti 3 O 12 (BNdT) films, and confirmed each remanent polarization (Pr) value of the purely (1 0 0)-, (1 1 7)-, and (0 0 1)-oriented BNdT films [17]. We have also enhanced ferro-and piezo-electric properties of Bi 3.7 Nd 0.3 Ti 3 O 12 film at 650 • C [18]. Such a low annealed temperature makes it possible to keep a satisfied compatibility and integration in the silicon technology.…”

“…The detailed formation procedure of BSTMn film was reported elsewhere [19]. Similar to our previous work [17,18], the precursor solution of BNdT was prepared by a metal organic decomposition process, and then deposited on both Pt/TiO2/SiO2/Si and BSTMn/Si using a sequential layer annealing method at 650 • C. We select the sequential layer anneal- ing possess because that each crystallized layer can be used as a seeding layer for growing the next one [20], and the thermal stresses and evaporation of elements can be reduced [21]. The thickness of BNdT film was estimated to be about 300 nm by a step (step obtained by chemical etching) profilometer made by the Ambios Technology Company of USA.…”