2018
DOI: 10.1002/advs.201801117
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Low Temperature Fabrication for High Performance Flexible CsPbI2Br Perovskite Solar Cells

Abstract: All‐inorganic CsPbX3‐based perovskites, such as CsPbI2Br, show much better thermal and illumination stability than their organic–inorganic hybrid counterparts. However, fabrication of high‐quality CsPbI2Br perovskite film normally requires annealing at a high temperature (>250 °C) that is not compatible with the plastic substrate. In this work, a Lewis base adduct‐promoted growth process that makes it possible to fabricate high quality CsPbI2Br perovskite films at low temperature is promoted. The mechanism is … Show more

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Cited by 106 publications
(84 citation statements)
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“…The TRPL spectra (Figure b) of the perovskite films were measured and fitted with a double exponential decay function, and the deduced parameters of PL lifetime are listed in Table S1, Supporting Information. The perovskite film with CsAc showed a much longer average carrier lifetime ( τ ave : 61.5 ns) compared with that of the perovskite film without CsAc alloying ( τ ave : 28.9 ns); the increased lifetime is benefit from the improved crystallinity and the reduced trap‐assisted recombination for perovskite film with CsAc alloying …”
Section: Resultsmentioning
confidence: 99%
“…The TRPL spectra (Figure b) of the perovskite films were measured and fitted with a double exponential decay function, and the deduced parameters of PL lifetime are listed in Table S1, Supporting Information. The perovskite film with CsAc showed a much longer average carrier lifetime ( τ ave : 61.5 ns) compared with that of the perovskite film without CsAc alloying ( τ ave : 28.9 ns); the increased lifetime is benefit from the improved crystallinity and the reduced trap‐assisted recombination for perovskite film with CsAc alloying …”
Section: Resultsmentioning
confidence: 99%
“…More interestingly,using this technique,aPCE of 13.5 %and 1.18 V V OC were achieved at low annealing temperature (120 8 8C), and enables fabrication of flexible PSCs with PCE of 11.7 %. [175] Zai et al used DMSO/DMF solvent mixtures at 100 8 8C(using SnO 2 as ETL and PTAA as the HTL) to obtain asPCE of 14.3 %with 1.16 V V OC . [176]…”
Section: Low-temperature Preparationmentioning
confidence: 99%
“…The curves were fitted with a biexponential decay function, and the fitting parameters are summarized in Table S1, Supporting Information. The fitted results indicate a longer average carrier lifetime ( τ ave , 50.44 ns) for the perovskite film w TPFPB passivation than for the control film ( τ ave , 44.55 ns), which is attributed to reduced trap‐assisted recombination at defect sites . In addition, PL and TRPL characterizations were also conducted to study the charge‐extraction dynamics at the perovskite/Spiro‐OMeTAD interface.…”
Section: Resultsmentioning
confidence: 99%