2011
DOI: 10.1007/978-3-642-15868-1_2
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Low-Temperature Fabrication of Germanium-on-Insulator Using Remote Plasma Activation Bonding and Hydrogen Exfoliation

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Cited by 6 publications
(10 citation statements)
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“…Then, an oxidation step is performed to produce a Ge-enriched layer which intermixes with the underlying Si layer to form a quasi-homogeneous SiGe layer. This epitaxial approach has the drawback of being carried out at high temperature and results in the formation of a high density of mismatch defects in the SiGe layer. , In terms of elastic properties, such very thin crystalline layers on a compliant ultrathin buried oxide layer (UT-BOX) pose their own challenges. SOI could act as a compliant substrate if it is mechanically decoupled from the wafer at the Si/SiO 2 interface.…”
Section: Introductionmentioning
confidence: 99%
“…Then, an oxidation step is performed to produce a Ge-enriched layer which intermixes with the underlying Si layer to form a quasi-homogeneous SiGe layer. This epitaxial approach has the drawback of being carried out at high temperature and results in the formation of a high density of mismatch defects in the SiGe layer. , In terms of elastic properties, such very thin crystalline layers on a compliant ultrathin buried oxide layer (UT-BOX) pose their own challenges. SOI could act as a compliant substrate if it is mechanically decoupled from the wafer at the Si/SiO 2 interface.…”
Section: Introductionmentioning
confidence: 99%
“…Given the mass spectra and FTIR spectra, the fact was proved that the hydroxyl groups on both SiO 2 and GeO 2 surfaces are significantly removed by thermal treatment. However, the XPS result exhibits only a symmetric XPS peak assigned to the Ge 4+ species at about 1221.0 eV (Figure S3), indicating that the hydroxyl groups on Ge/SiO 2 catalyst were removed at no expense of valence change of Ge ions. , …”
Section: Resultsmentioning
confidence: 99%
“…Colinge et al (32) have proposed a germanium-to-silicon wafer bonding using SAB technique at low temperature, which is annealed at 200-300 C. Kühne and Hierold (33) presented low-temperature wafer bonding for Si-SiO 2 plasma-activated surfaces hybridized by eutectic binding of ultrathin Au-Sn layers. They stated that the hybrid wafer-level bonding and interconnection technology enables the metal interconnects and multiple materials in stacked MEMS devices to be integrated.…”
Section: Surface Activated Bondingmentioning
confidence: 99%