Low-Temperature Fabrication of High Quality Gate Insulator in Metal–Oxide–Semiconductor Capacitor Using Laser Annealing

Yu, Kun-Ming; Ji, Hyung-Min; Nguyen, Manh-Cuong; Nguyen, An Hoang-Thuy; Choi, Seung-Ho; Cheon, Jonggyu; Kim, Jin-Hyun; Kim, Sang Woo; Cho, Seong‐Yong; Choi, Rino

doi:10.1109/led.2018.2889346

Cited by 6 publications

(4 citation statements)

References 17 publications

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“…The remarkable characteristics of this promising annealing method match the high thermal energy demand of metal‐oxide thin‐film manufacturing, alongside other advantageous characteristics such as decreased processing time, compatibility with R2R and S2S printing techniques, low processing temperatures, precise energy delivery control, materials' selectivity, and direct patterning . Therefore, the introduction of LA in metal‐oxide‐based applications has offered improved optoelectronic characteristics, thus inspiring the next generation of (opto)electronic devices including TFTs, organic light emitting diodes OLEDs, sensors, capacitors, electrochromics, memory devices, and photovoltaics …”

Section: Laser Annealingmentioning

confidence: 99%

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Yarali

Koutsiaki

Faber

et al. 2019

Adv Funct Materials

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(1 of 37)high mobility (µ) (even in amorphous phase), wide bandgap (transparent in the visible range), and the ability to be controllably doped. Importantly, they can be grown into thin films and various nanostructures with different scalable deposition techniques, including vacuum-based methods such as physical vapor deposition (PVD) [7,8] and chemical vapor deposition (CVD) [9] as well as solution-based processes such as spray [10] and spin coating. [11] Moreover, the resulting layers can be easily patterned using standard fabrication procedures and as such can be integrated into state-of-the-art processes for (opto)electronic applications. The above-mentioned capabilities have led to a plethora of applications such as switching backplanes for displays, transparent and flexible electronics, integrated circuits (ICs), photovoltaics (PVs), organic light-emitting diodes (OLEDs), capacitors, batteries, photocatalytic devices, electrochromics and memory devices, to name but a few. [8,[12][13][14] Because of their ability to be doped, their electronic properties can be tuned from dielectrics to semiconductors and conductors. This characteristic versatility has recently been exploited to stretch the range of their applications to new technological sectors, such as plasmonics in the near infrared and midinfrared spectral ranges. [12,15] One of the driving applications of metal oxides is in thinfilm transistors (TFTs) for large area electronics such as current driven optical displays and ICs. Following the early demonstrations, [16] most effort focused on the fabrication and processing of metal oxides TFTs paying particular attention to the device performance and applications. [1,5,6,17] Especially when processed over large areas, as in the case for display applications, the complexity to precisely control the device reliability and reproducibility becomes a challenging aspect of any TFT technology. To that respect, solution-based techniques progressed rapidly due to their lower cost and higher throughput compared to vacuum-based techniques. In both cases, the metal-oxide deposition has so far been limited to high processing temperatures (>250 °C) (Figure 1a) which renders the technology incompatible with inexpensive, temperature-sensitive substrates such as polymers, the material class of choice for various high throughput manufacturing techniques such as roll-to-roll (R2R) and sheet-to-sheet (S2S)Over the past few decades, significant progress has been made in the field of photonic processing of electronic materials using a variety of light sources. Several of these technologies have now been exploited in conjunction with emerging electronic materials as alternatives to conventional hightemperature thermal annealing, offering rapid manufacturing times and compatibility with temperature-sensitive substrate materials among other potential advantages. Herein, recent advances in photonic processing paradigms of metal-oxide thin-film transistors (TFTs) are presented with particular emphasis on the use of various light sour...

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Section: Laser Annealingmentioning

confidence: 99%

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Yarali

Koutsiaki

Faber

et al. 2019

Adv Funct Materials

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“…26−28 This localization of the thermal effect makes it possible to produce minimal to zero interactions with the underlying layers, substrate, or even adjacent structures, 26 making it interesting in diverse materials processing, which requires selective annealing, 29−32 patterning, 33−35 crystal growth, 36,37 and ablation. 33,38 Laser irradiation has been used to tailor the characteristics of metal oxide films and nanostructures for diverse applications such as dielectric materials, 31,39 solar cells, 40 ferroelectric oxide thin films, 41 transparent conductors, 32,42−44 and TFTs. 20,29,35,37,45−47 Previously, we demonstrated the use of excimer laser and UV irradiation to induce structural modification in an a-IZO film.…”

Section: ■ Introductionmentioning

confidence: 99%

“…The most common strategy is performing a thermal annealing step > 400 °C for several hours to achieve acceptable device performance. ,, Attempts to lower the induced temperature on the device involve the use of microwave annealing, , high-pressure annealing, , and photochemical activation. − In particular, photoactivation is a sustainable technique wherein the energetic photons from the light source aid in the decomposition of precursors and the subsequent densification of metal oxide. , Several reports have demonstrated UV irradiation to be effective in accelerating precursor decomposition and subsequent metal-oxide formation. , On the other hand, laser irradiation is another strategy that is preferred over conventional thermal treatment in terms of addressing issues such as high thermal budget, long processing times, and incompatibility with heat-sensitive substrates, which leads to mechanical failure . Laser processing primarily works by generating high energy in a confined area using a focused laser to induce photothermal effects at a target location. − This localization of the thermal effect makes it possible to produce minimal to zero interactions with the underlying layers, substrate, or even adjacent structures, making it interesting in diverse materials processing, which requires selective annealing, − patterning, − crystal growth, , and ablation. , Laser irradiation has been used to tailor the characteristics of metal oxide films and nanostructures for diverse applications such as dielectric materials, , solar cells, ferroelectric oxide thin films, transparent conductors, ,− and TFTs. ,,,,− Previously, we demonstrated the use of excimer laser and UV irradiation to induce structural modification in an a-IZO film . Combining excimer laser irradiation with UV irradiation has been shown to be critical for achieving the superior characteristics of fully solution-processed a-IZO TFTs.…”

Section: Introductionmentioning

confidence: 99%

Continuous-Wave Green Laser Activation of Transparent InZnO Electrodes for Fully Solution-Processed Oxide Thin-Film Transistors

Corsino,

Bermundo,

Razali

et al. 2023

ACS Appl. Electron. Mater.

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Thin-film electronics integration onto large-scale flexible substrates is making huge advancements in many sectors, which include display technology and health care. This requires both large-area deposition and low-temperature fabrication strategies to be suitable for heat-sensitive substrates. In this context, solution processing is preferred over conventional vacuum techniques as it eliminates the use of complex and high-energy equipment and is compatible with atmospheric processing, making it favorable for high throughput roll-to-roll processing. In this work, we demonstrate a full solution approach for oxide thin-film transistor (TFT) fabrication using a spin-coating technique. Amorphous InZnO (a-IZO) is used for both the semiconductor and electrode layers, while fluorinated polysilsesquioxane is used as the gate insulator. By utilization of a top-gate self-aligned structure, the channel and electrode regions in a single a-IZO layer can be defined. In order to achieve a functional TFT, a continuous-wave green laser with a wavelength of 532 nm is irradiated onto the device to modify the electrical properties of a-IZO and transform regions of the semiconductive oxide into a conductive electrode. The fully solution-processed a-IZO TFT reaches a linear mobility of 14.6 cm 2 V −1 s −1 and an on−off current ratio in the order of 10 8 , which rivals the performance of vacuum-processed oxide TFTs. Our analyses show the retention of the amorphous structure of IZO accompanied by changes in the chemical bonding in the metal-oxide network. The enhancement in the conductivity of a-IZO is proposed to be related to oxygen vacancy generation and formation of In−In bonds, as suggested by the observed shift of the XPS O 1s spectra to a higher binding energy and of the XPS In 3d spectra to a lower binding energy. These findings demonstrate the suitability of continuous-wave green laser irradiation to tailor the electrical properties of metal oxides and its potential for low-temperature device fabrication.

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“…Metal oxide dielectrics have drawn a lot of attention in recent years due to their use in the fabrication of high performance thin film capacitors (TFCs) [1], low voltage thin film transistors (TFTs) [2], and memristor devices [3]. However, the next generation of thin film electronic devices and systems will require reduced power consumption and the development of dielectric materials that can be inexpensively deposited from solution on large areas as a thin film is urgently needed [4].…”

Section: Introductionmentioning

confidence: 99%