Low-temperature fabrication of Pr-doped In₂O₃ electrospun nanofibers for flexible field-effect transistors

Abstract

Although metal oxide nanofibers (MO-NFs) based field-effect transistors (FETs) prepared by electrospinning have attained great attentions, it is still challenging to develop MO-NFs directly on flexible substrates such as polyimide...

Electrospun Highly Aligned IGZO Nanofiber Arrays with Low‐Thermal‐Budget for Challenging Transistor and Integrated Electronics

“…As a response, the device performance in both cases is not optimistic due to excessive electron concentration, which is in agreement with previous reports. [16,17] However, with an appropriate ratio of V o , the device performance is balanced and excellent, such as 350 °C-2 h (19.2%). On the other hand, M─OH can act as a trap site, limiting electron conduction.…”

“…Ding et al investigated the electrical behavior of In 2 O 3 FETs under different annealing conditions with the polyvinyl alcohol (PVA) as polymer solute, and a considerable μ FE (5.8 cm 2 V −1 s −1 ) was obtained at 280 °C-10 h. [16] Nevertheless, the strategy of pursuing low temperatures and extending the annealing time is not completely convincing, and even the authors endorsed the performance of FETs at 380 °C−1 h. In a recent work, Shi et al prepared good-performance InPrO NFN FETs on a flexible substrate at a temperature of 380 °C for 4 h, which employed polyvinyl pyrrolidone (PVP) as a solute. [17] The authors argue that nitrate facilitates the decomposition of the PVP, but its suitability with other polymers in most cases remains to be verified. In addition, although PVA can meet the requirements of low-temperature preparation, it is often due to the excessive viscosity, resulting in increased friction between the polymer fiber chains and a tendency to entanglement.…”