2009
DOI: 10.1016/j.jeurceramsoc.2008.08.024
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Low temperature firing of BiSbO4 microwave dielectric ceramic with B2O3–CuO addition

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Cited by 28 publications
(11 citation statements)
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“…Pure Li 2 TiO 3 ceramics cannot be well densified below 1000°C and at high temperature the volatilization of Li becomes serious. Liang and Lu 9 successfully used ZnO–B 2 O 3 frit to lower the sintering temperature to around 900°C, and the good microwave dielectric properties with an ɛ r of ∼23.06, a Q × f of ∼32 275 GHz, a TCF of ∼+35.79 ppm/°C were obtained for 2.5 wt% ZnO–B 2 O 3 frit‐doped Li 2 TiO 3 ceramics sintered at 900°C for 2 h. The B 2 O 3 –CuO was usually used to lower the sintering temperature of microwave dielectric ceramics and it works well in the Ba(Mg 1/3 Nb 2/3 )O 3 , Ba(Zn 1/3 Nb 2/3 )O 3 , and BiSbO 4 systems 10–12 . In the present work, the influence of B 2 O 3 –CuO addition on the sintering behaviors, phase compositions and microwave dielectric properties of Li 2 MO 3 (M=Ti, Zr, Sn) ceramics were studied.…”
Section: Introductionmentioning
confidence: 99%
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“…Pure Li 2 TiO 3 ceramics cannot be well densified below 1000°C and at high temperature the volatilization of Li becomes serious. Liang and Lu 9 successfully used ZnO–B 2 O 3 frit to lower the sintering temperature to around 900°C, and the good microwave dielectric properties with an ɛ r of ∼23.06, a Q × f of ∼32 275 GHz, a TCF of ∼+35.79 ppm/°C were obtained for 2.5 wt% ZnO–B 2 O 3 frit‐doped Li 2 TiO 3 ceramics sintered at 900°C for 2 h. The B 2 O 3 –CuO was usually used to lower the sintering temperature of microwave dielectric ceramics and it works well in the Ba(Mg 1/3 Nb 2/3 )O 3 , Ba(Zn 1/3 Nb 2/3 )O 3 , and BiSbO 4 systems 10–12 . In the present work, the influence of B 2 O 3 –CuO addition on the sintering behaviors, phase compositions and microwave dielectric properties of Li 2 MO 3 (M=Ti, Zr, Sn) ceramics were studied.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4][5][6] The Li 2 TiO 3 and its modification ceramics have attracted much attention because of its good microwave dielectric properties (relative permittivity e r 5 22-24, Q Â f value 5 40 000-70 000 GHz, TCF 5 120 ppm/1C). 7 [10][11][12] In the present work, the influence of B 2 O 3 -CuO addition on the sintering behaviors, phase compositions and microwave dielectric properties of Li 2 MO 3 (M 5 Ti, Zr, Sn) ceramics were studied. To apply this system in the LTCC technology, the chemical compatibility between Li 2 MO 3 (M 5 Ti, Zr, Sn) ceramics and silver was also studied.…”
Section: Introductionmentioning
confidence: 99%
“…dielectric properties remains a central tenant of materials research and design efforts for microwave engineering applications. [11][12][13][14][15] In order to obtain the desired dielectric materials, a theory relating structure and microwave dielectric properties has been proposed. 12,[16][17][18][19] Recently, ceramic materials containing lithium having a rock-salt structure possess unique potential for practical applications due to suitable microwave dielectric properties.…”
Section: Introductionmentioning
confidence: 99%
“…Instead, materials with high dielectric loss or large temperature coefficients of resonance frequency are quite common. Therefore, how to improve the dielectric properties remains a central tenant of materials research and design efforts for microwave engineering applications . In order to obtain the desired dielectric materials, a theory relating structure and microwave dielectric properties has been proposed …”
Section: Introductionmentioning
confidence: 99%
“…High relative permittivities are necessary since the size of the dielectric device is inversely proportional to the square root of the dielectric constant ε r . While the result should not be achieved with the decrease of the quality factor (Q × f), where Q ~ 1/ tanδ (tanδ is the dielectric loss tangent and f is the resonant frequency) [4][5][6][7][8].…”
Section: Introductionmentioning
confidence: 99%