Low-temperature formation of β-silicon carbide

Ulrich, S.; Theel, T.; Schwan, J.; Batori, V.; Scheib, M.; Ehrhardt, H.

doi:10.1016/s0925-9635(96)00717-0

Cited by 47 publications

(17 citation statements)

References 19 publications

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“…Several groups have used the technique to deposit submicron-thick a-SiC films under various conditions [111,[129][130][131][132][133]. As opposed to DC sputtering, RF magnetron sputtering is the preferred method when depositing insulating material.…”

Section: Materials Preparationmentioning

confidence: 99%

Micro‐ and nanomechanical structures for silicon carbide MEMS and NEMS

Zorman

Parro

2008

Physica Status Solidi (b)

100

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Silicon carbide (SiC) is recognized as the leading semiconductor for high power and high temperature electronics owing to its outstanding electrical properties combined with mature processing technologies for monolithic structures. SiC has long been known for its outstanding mechanical and chemical properties making it equally attractive for mechanical structures in micro‐ and nanoelectromechanical systems (MEMS and NEMS). Recent advancements in bulk and surface micromachining have led to the development of SiC analogues to common Si‐based devices (i.e., resonators, pressure sensors). This paper presents an overview of MEMS and NEMS technologies that incorporate SiC as a key component in their mechanical structure, providing both a historical perspective as well as recent developments. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Materials Preparationmentioning

confidence: 99%

Micro‐ and nanomechanical structures for silicon carbide MEMS and NEMS

Zorman

Parro

2008

Physica Status Solidi (b)

100

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“…In recent years, one of the most appealing reinforcements used is SiC particle of good mechanical resistance, high hardness and Young's modulus [2][3][4], which can significantly improve the mechanical, tribological properties of nickel while maintaining its thermal and electrical conductivities [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Effect of α-Al2O3 coatings on the mechanical properties of Ni/SiC composites prepared by electrodeposition

Liu

Shen

et al. 2012

Materials Science and Engineering: A

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“…Moreover, high heat fluxes and elevated temperatures suffered by TPS during the hypervelocity flights demand TPS material endowing with good oxidation and thermal shock resistance, excellent dimensional stability and ablation resistance [1] . SiC coatings are the object of special interest for aerospace applications because of their combination of unique physicochemical, electrical and mechanical properties in rigid condition (such as ultra high velocity and temperature condition) [2][3][4][5] .…”

Section: Introductionmentioning

confidence: 99%

Thermodynamic analysis of the preparation process of EB-PVD SiC coating

Jiao

Yang

2009

J. Wuhan Univ. Technol.-Mat. Sci. Edit.

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The process of preparing SiC coating by electron beam-physical vapor deposition (EB-PVD) was discussed from viewpoint of thermodynamis. Results show that within the temperature range of 2 700-3 300 K, the ratio of SiC in the SiC coating doesn't change much and keeps around 0.7. Purity of the as-deposited SiC coating is not high. To improve the purity of the SiC coating, the SiC ingot is required to not be, necessary in full density but be fine-grained.

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Low-temperature formation of β-silicon carbide

Cited by 47 publications

References 19 publications

Micro‐ and nanomechanical structures for silicon carbide MEMS and NEMS

Micro‐ and nanomechanical structures for silicon carbide MEMS and NEMS

Effect of α-Al2O3 coatings on the mechanical properties of Ni/SiC composites prepared by electrodeposition

Thermodynamic analysis of the preparation process of EB-PVD SiC coating

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