2014
DOI: 10.1039/c3ta14906d
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Low temperature grown CuBi2O4 with flower morphology and its composite with CuO nanosheets for photoelectrochemical water splitting

Abstract: In this work we highlight a peculiar synthesis protocol for the p-type ternary metal oxide system of copper bismuth oxide (CuBi 2 O 4 ), which yields a highly crystalline spherulitic morphology at a low temperature of 78 C. We associate this growth with the hydrogen bonding effects imparted by the ethanol-water cosolvent system used for the synthesis. We present a detailed growth mechanism by evaluating different synthesis conditions systematically. Furthermore we show that upon the use of the non-stoichiometr… Show more

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Cited by 113 publications
(93 citation statements)
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“…The XRD pattern matches the JCPDS database (042-0334) and previous reports, respectively. [24][25][26][27][28] No peaks from impurity phases were observed. The crystal size was estimated using Scherrer equation from the diffraction peak widths at half maxima and was found to be about 28 nm.…”
Section: Resultsmentioning
confidence: 98%
“…The XRD pattern matches the JCPDS database (042-0334) and previous reports, respectively. [24][25][26][27][28] No peaks from impurity phases were observed. The crystal size was estimated using Scherrer equation from the diffraction peak widths at half maxima and was found to be about 28 nm.…”
Section: Resultsmentioning
confidence: 98%
“…The CuO nanorods, with a band‐gap energy of 1.7 eV (Scheme ), as extracted from the UV/Vis spectrum (Figure S5 in the Supporting Information), absorb visible light and generate electron–hole pairs. The conduction band edge of CuO, which is more negative (−0.7 V versus a normal hydrogen electrode) than the hydrogen evolution potential, thermodynamically favors hydrogen generation through water splitting . The ILs possess conductivities because they are composed of cations and anions held together by columbic interactions, and their electrochemical potential windows are determined by the structure of the constituent ions .…”
Section: Resultsmentioning
confidence: 99%
“…[100,112] CuBi 2 O 4 is ap -type semiconductor with E G = 1.6-1.8 eV,w hich corresponds to am aximum theoretical j ph of 20 mA cm À2 .I ts crystal structure is formed by stacks of [CuO 4 ] that are connected to Bi (Figure 5c). [100] After demonstrating the high photoactivity of CuBi 2 O 4 in 2007, various synthetic methodsh ave been explored, such as electrodeposition, [114][115][116] low-temperature crystal growth, [117] hydrothermal reactions, [118] ands pray pyrolysis. [5] Although the hole mobility at 10 À3 cm 2 V À1 s À1 is relatively low,t he flat-band potential, approximately equal to ÀE VS /Q 0 ,i sa bout 1.26-1.29 V versus RHE, which is quite positivec ompared with that of other p-type p-PEs.…”
Section: Copper-based Ternary Oxidesmentioning
confidence: 99%