Low-temperature growth and physical investigations of undoped and (In, Co) doped ZnO thin films sprayed on PEI flexible substrate

Ameur, S. Ben; Barhoumi, A.; Mimouni, R.; Amlouk, M.; Guermazi, H.

doi:10.1016/j.spmi.2015.04.028

Cited by 23 publications

(13 citation statements)

References 44 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Similar results were reported in the literature[14,15,16]. The absorption and reflectance data are related to the extinction coefficient κ and refractive index n. To determine κ, we used the following equation[17]:Fig.5…”

supporting

confidence: 69%

See 1 more Smart Citation

Influence of grain size on structural and optic properties of PbS thin films produced by SILAR method

2015

View full text Add to dashboard Cite

supporting

confidence: 69%

“…The values of the refractive index n and the extinction coefficient k can be used to calculate the real and imaginary parts of the dielectric constant from the following expressions [17]: Table 3 4…”

Section: Figmentioning

confidence: 99%

Influence of grain size on structural and optic properties of PbS thin films produced by SILAR method

2015

View full text Add to dashboard Cite

“…This implies that the precursors have been completely converted into ZnO phase, and Na doping did not alter the hexagonal structure of the ZnO lattice. No shifts are detected for the characteristic peaks although the differences between the ionic radii of the host and the dopant, r Zn = 0.74 Å and r Na = 0.95 Å 31 36 . However, introducing Na into ZnO lattice reduces the peak’s sharpness except for the (103) reflection peak.…”

Section: Resultsmentioning

confidence: 88%

Enhanced Gas Sensing Properties of Spin-coated Na-doped ZnO Nanostructured Films

Basyooni

Shaban

Sayed

2017

Sci Rep

168

View full text Add to dashboard Cite

In this report, the structures, morphologies, optical, electrical and gas sensing properties of ZnO and ZnO: Na spin-coated films are studied. X-ray diffraction (XRD) results reveal that the films are of a single phase wurtzite ZnO with a preferential orientation along (002) direction parallel to c-axis. Na doping reduces the crystalline quality of the films. The plane surface of ZnO film turned to be wrinkle net-work structure after doping. The reflectance and the optical band gap of the ZnO film decreased after Na doping. The wrinkle net-work nanostructured Na-doped film shows an unusually sensitivity, 81.9% @ 50 sccm, for CO2 gas at room temperature compared to 1.0% for the pure ZnO film. The signals to noise ratio (SNR) and detection limit of Na-doped ZnO sensor are 0.24 and 0.42 sccm, respectively. These enhanced sensing properties are ascribed to high surface-to-volume ratio, hoping effect, and the increase of O- vacancies density according to Kroger VinK effect. The response time increased from 179 to 240 s by the incorporation of Na atoms @50 sccm. This response time increased as the CO2 concentration increased. The recovery time is increased from 122 to 472 s by the incorporation of Na atoms @50 sccm.

show abstract

“…Figure 6 shows the evolution of refractive index n and extinction coefficient K of AMZO thin films deposited at different working pressures. The refractive index is related to the transmittance, reflectance and extinction coefficient K by the following expression [39,40]:…”

Section: Optical Propertiesmentioning

confidence: 99%

Processing and Study of Optical and Electrical Properties of (Mg, Al) Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering for Photovoltaic Application

et al. 2020

View full text Add to dashboard Cite

In this study, high transparent thin films were prepared by radio frequency (RF) magnetron sputtering from a conventional solid state target based on ZnO:MgO:Al2O3 (10:2 wt %) material. The films were deposited on glass and silicon substrates at the different working pressures of 0.21, 0.61, 0.83 and 1 Pa, 300 °C and 250 W of power. X-ray diffraction patterns (XRD), atomic force microscopy (AFM), UV-vis absorption and Hall effect measurements were used to evaluate the structural, optical, morphological and electrical properties of thin films as a function of the working pressure. The optical properties of the films, such as the refractive index, the extinction coefficient and the band gap energy were systematically studied. The optical band gap of thin films was estimated from the calculated absorption coefficient. That parameter, ranged from 3.921 to 3.655 eV, was hardly influenced by the working pressure. On the other hand, the lowest resistivity of 8.8 × 10−2 Ω cm−1 was achieved by the sample deposited at the lowest working pressure of 0.21 Pa. This film exhibited the best optoelectronic properties. All these data revealed that the prepared thin layers would offer a good capability to be used in photovoltaic applications.

show abstract

Low-temperature growth and physical investigations of undoped and (In, Co) doped ZnO thin films sprayed on PEI flexible substrate

Cited by 23 publications

References 44 publications

Influence of grain size on structural and optic properties of PbS thin films produced by SILAR method

Influence of grain size on structural and optic properties of PbS thin films produced by SILAR method

Enhanced Gas Sensing Properties of Spin-coated Na-doped ZnO Nanostructured Films

Processing and Study of Optical and Electrical Properties of (Mg, Al) Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering for Photovoltaic Application

Contact Info

Product

Resources

About