Low temperature growth of (AlGa)₂O₃ films by oxygen radical assisted pulsed laser deposition

Abstract

Low temperature growth of β-(AlGa)2O3 films has been realized by oxygen radical assisted pulsed laser deposition.

Impact of Al doping on a hydrothermally synthesized β-Ga2O3 nanostructure for photocatalysis applications

“…As the Al concentration increased, the additional peak at 75 eV appeared, which was considered to be Al-O bonds. 30,45,46 This Al-O peak shied toward the higher binding energy with the Al concentration in the b-Ga 2 O 3 , which was also in good agreement with previous reports. 30,46,47 47 In Fig.…”

“…30,45,46 This Al-O peak shied toward the higher binding energy with the Al concentration in the b-Ga 2 O 3 , which was also in good agreement with previous reports. 30,46,47 47 In Fig. 4(c), two O 1s peaks located at 530.2 eV (O I ) and 532.0 eV (O II ) represented the O 2 À ions in the oxygensaturated and oxygen-decient regions, respectively.…”

“…As the Al concentration increased, the additional peak at 75 eV appeared, which was considered to be Al–O bonds. 30,45,46 This Al–O peak shifted toward the higher binding energy with the Al concentration in the β-Ga 2 O 3 , which was also in good agreement with previous reports. 30,46,47 The presence of Al–O bonding in the Al-doped β-Ga 2 O 3 nanostructures presumably originated from the hydrothermal solution because the formation of [Al(OH) 2 aq + ] and [AlO 2 aq − ] was thermodynamically favorable; the Gibbs free energies of the [Al(OH) 2 aq + ] and [AlO 2 aq − ] were calculated as −914.2 and −830.9 kJ mol −1 , respectively.…”

“…This increase in the bandgap with the Al concentration was mainly caused by the increase in the conduction band edge compared with the changes in the valence band edge. [28][29][30] The redox potential (reduction ability) could be enhanced with the increase in the Al concentration and consequently improve the photocatalytic activity of the b-Ga 2 O 3 . The nanostructure bandgap was smaller than that of the thin lms by around 0.2 eV, which was attributed to the light scattering effect in the nanostructures.…”

“…It has been reported that aluminum (Al) can increase the Ga 2 O 3 bandgap upon doping. [28][29][30] Thus, Al doping in Ga 2 O 3 semiconductors has been intensively studied to modulate the energy bandgap for power electronics and photodetectors. [28][29][30] However, the photocatalytic properties of Ga…”