Low-temperature growth of ferroelectric lead zirconate titanate thin films using the magnetic field of low power 2.45GHz microwave irradiation

Wang, Z. J.; Cao, Ziping; Otsuka, Yuka; Yoshikawa, Noboru; Kokawa, Hiroyuki; Shoji, Tetsuya

doi:10.1063/1.2938876

Cited by 42 publications

(35 citation statements)

References 21 publications

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“…It is a well-known member of the perovskite family and shows great potential in applications such as nonvolatile random access memories, microwave devices, and electromechanical or photo-mechanical transducers. [13][14][15] In particular, research has been focused on its energy storage ability owning to its high permittivity and low remnant polarization. 3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 4 silicon substrates.…”

Section: Introductionmentioning

confidence: 99%

Controlling Dielectric and Relaxor-Ferroelectric Properties for Energy Storage by Tuning Pb_0.92La_0.08Zr_0.52Ti_0.48O₃ Film Thickness

Brown

Acharya

et al. 2014

ACS Appl. Mater. Interfaces

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The energy storage properties of Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films grown via pulsed laser deposition were evaluated at variable film thickness of 125, 250, 500, and 1000 nm. These films show high dielectric permittivity up to ∼1200. Cyclic I-V measurements were used to evaluate the dielectric properties of these thin films, which not only provide the total electric displacement, but also separate contributions from each of the relevant components including electric conductivity (D1), dielectric capacitance (D2), and relaxor-ferroelectric domain switching polarization (P). The results show that, as the film thickness increases, the material transits from a linear dielectric to nonlinear relaxor-ferroelectric. While the energy storage per volume increases with the film thickness, the energy storage efficiency drops from ∼80% to ∼30%. The PLZT films can be optimized for different energy storage applications by tuning the film thickness to optimize between the linear and nonlinear dielectric properties and energy storage efficiency.

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Section: Introductionmentioning

confidence: 99%

Controlling Dielectric and Relaxor-Ferroelectric Properties for Energy Storage by Tuning Pb_0.92La_0.08Zr_0.52Ti_0.48O₃ Film Thickness

Brown

Acharya

et al. 2014

ACS Appl. Mater. Interfaces

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“…[3][4][5] In particular, Pb(Zr 0.52 Ti 0.48 )O 3 with a low coercive field and high remnant polarization 6 has been widely investigated for application in microwave devices, 7 energy storage, and capacitance. 8 However, the common Pb loss induced a large number of oxygen vacancies, which locate typically at grain boundaries or/and at the interfaces between PZT and electrodes.…”

mentioning

confidence: 99%

Enhanced dielectric nonlinearity in epitaxial Pb0.92La0.08Zr0.52Ti0.48O3 thin films

et al. 2014

Applied Physics Letters

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High quality c-axis oriented epitaxial Pb0.92La0.08Zr0.52Ti0.48O3 films were fabricated using pulsed laser deposition on (001) LaAlO3 substrates with conductive LaNiO3 buffers. Besides confirmation of the in-plane and out-of-plane orientations using X-ray diffraction, transmission electron microscopy study has revealed columnar structure across the film thickness with column width around 100 nm. Characterization of ferroelectric properties was carried out in comparison with polycrystalline Pb0.92La0.08Zr0.52Ti0.48O3 films to extract the effect of epitaxial growth. It is found that the ratio between the irreversible Rayleigh parameter and reversible parameter increased up to 0.028 cm/kV at 1 kHz on epitaxial samples, which is more than twice of that on their polycrystalline counterparts. While this ratio decreased to 0.022 cm/kV with increasing frequency to100 kHz, a much less frequency dependence was observed as compared to the polycrystalline case. The epitaxial Pb0.92La0.08Zr0.52Ti0.48O3 films exhibited a higher mobility of domain wall and the higher extrinsic contribution to the dielectric properties, as well as reduced density of defects, indicating that it is promising for tunable and low power consumption devices.

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“…Though the sol-gel-based chemical method is widely used for the fabrication of thick films, but the thickness of sol-gel-coated films are limited to a few microns (\5 lm) due to the requirement of a large number of deposition cycles. Different approaches have been proposed for the fabrication of a low sintering phase formation by the aerosol deposition method, [11,12] laser annealing processes [13], and microwave irradiation using magnetic field [14], etc. But, these fabrication methods require very involved and expensive instrumentation.…”

Section: Low Temperature Thick Coating (10-100 Lm)mentioning

confidence: 99%

Piezoceramic Coatings for MEMS and Structural Health Monitoring

Dutta

2014

Springer Tracts in Mechanical Engineering

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The advent of smart materials has given a new dimension to the field of Materials Science, resulting in many significant application-oriented developments in all fields of engineering. Piezoelectric material is an important member of the smart material family. Bulk piezo sensors and actuators have been used widely for smart structure applications. The limitation in using piezoceramic material in its bulk form as sensors and actuators in real applications is due to its brittleness, nonconformability, high temperature processing, small area coverage, and associated ill effects of using an adhesive bond layer for attaching them. In situ piezo transducers, covering a large area, provide a very good solution circumventing aforementioned problems. The indigenous development of a smart and conformal piezoceramic coating with a low process temperature makes it suitable for Silicon batch processing not only for the fabrication of piezoceramic MEMS but also for the Nondestructive Evaluation (NDE) of metals and composites in guided wavebased real-time Structural Health Monitoring (SHM). This chapter presents the development of application-specific in situ piezoeceramic coating and the technical challenges therein.

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Low-temperature growth of ferroelectric lead zirconate titanate thin films using the magnetic field of low power 2.45GHz microwave irradiation

Cited by 42 publications

References 21 publications

Controlling Dielectric and Relaxor-Ferroelectric Properties for Energy Storage by Tuning Pb_0.92La_0.08Zr_0.52Ti_0.48O₃ Film Thickness

Controlling Dielectric and Relaxor-Ferroelectric Properties for Energy Storage by Tuning Pb_0.92La_0.08Zr_0.52Ti_0.48O₃ Film Thickness

Enhanced dielectric nonlinearity in epitaxial Pb0.92La0.08Zr0.52Ti0.48O3 thin films

Piezoceramic Coatings for MEMS and Structural Health Monitoring

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Low-temperature growth of ferroelectric lead zirconate titanate thin films using the magnetic field of low power 2.45GHz microwave irradiation

Cited by 42 publications

References 21 publications

Controlling Dielectric and Relaxor-Ferroelectric Properties for Energy Storage by Tuning Pb0.92La0.08Zr0.52Ti0.48O3 Film Thickness

Controlling Dielectric and Relaxor-Ferroelectric Properties for Energy Storage by Tuning Pb0.92La0.08Zr0.52Ti0.48O3 Film Thickness

Enhanced dielectric nonlinearity in epitaxial Pb0.92La0.08Zr0.52Ti0.48O3 thin films

Piezoceramic Coatings for MEMS and Structural Health Monitoring

Contact Info

Product

Resources

About

Controlling Dielectric and Relaxor-Ferroelectric Properties for Energy Storage by Tuning Pb_0.92La_0.08Zr_0.52Ti_0.48O₃ Film Thickness

Controlling Dielectric and Relaxor-Ferroelectric Properties for Energy Storage by Tuning Pb_0.92La_0.08Zr_0.52Ti_0.48O₃ Film Thickness