Low temperature growth of high crystallinity GeSn on amorphous layers for advanced optoelectronics

Li, Haofeng; Brouillet, Jeremy; Salas, Alan; Wang, Xiaoxin; Liu, Jifeng

doi:10.1364/ome.3.001385

Cited by 61 publications

(72 citation statements)

References 30 publications

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“…Monolithic integration of PbTe detector arrays with CMOS readout integrated circuits (ROICs) has also been demonstrated [192]. In addition to lead salts, other promising material candidates for monolithic mid-IR detection include GeSn [193] and colloidal quantum dots [194]. A second monolithic detector integration approach builds on Si itself.…”

Section: Inmentioning

confidence: 99%

Mid-infrared integrated photonics on silicon: a perspective

et al. 2017

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Abstract:The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2-20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

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Section: Inmentioning

confidence: 99%

Mid-infrared integrated photonics on silicon: a perspective

et al. 2017

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“…11 In addition, it has been reported that the crystallization temperature of Ge is lowered by tin (Sn)-induced crystallization with a metal Sn layer or seeds. [12][13][14][15] This is because, the Sn-Ge binary system is a unique eutectic alloy with a low eutectic temperature of 231.1 C.…”

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confidence: 99%

High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization

Takeuchi

Taoka

Kurosawa

et al. 2015

Applied Physics Letters

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We investigated the effects of incorporation of 0%–2% tin (Sn) into amorphous germanium (Ge) on its crystallization behavior and electrical properties. Incorporation of only 0.2% Sn caused the polycrystallization temperature of Ge to lower from 450 to 430 °C, while a polycrystalline Ge1−xSnx layer with high crystallinity compared to that of polycrystalline Ge was formed by incorporation of 2% Sn. A polycrystalline Ge1−xSnx layer with a low Sn content of 2% annealed at 450 °C exhibited a Hall hole mobility as high as 130 cm2/V s at room temperature even though it possessed a small grain size of 20–30 nm. The Hall hole mobility of a poly-Ge1−xSnx layer with an Sn content of 2% was four times higher than that of a polycrystalline Ge layer and comparable to that of single-crystalline silicon.

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“…[23][24][25][26] More recently, the study of GeSn on insulators (GSOIs) has been accelerated for fabricating monolithically integrated GeSn-based devices on three-dimensional Si largescale integrated circuits and on multi-functional displays with glass or plastic substrates. [27][28][29][30][31][32] In particular, the Sninduced crystallization of amorphous (a-) Ge(Sn) has garnered attention. [30][31][32] This technique produced polycrystalline (poly-) GSOIs at low temperatures (150-475 C) by using Sn as a catalyst; however, the Sn compositions in GeSn were still low.…”

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confidence: 99%

“…[27][28][29][30][31][32] In particular, the Sninduced crystallization of amorphous (a-) Ge(Sn) has garnered attention. [30][31][32] This technique produced polycrystalline (poly-) GSOIs at low temperatures (150-475 C) by using Sn as a catalyst; however, the Sn compositions in GeSn were still low. In the present study, we investigated the Sninduced crystallization of a-Ge focusing on the relation between the growth temperature and the Sn composition in GeSn.…”

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confidence: 99%

70 °C synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of amorphous Ge

Toko

Saitoh

et al. 2015

Applied Physics Letters

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Polycrystalline GeSn thin films are fabricated on insulating substrates at low temperatures by using Sn-induced crystallization of amorphous Ge (a-Ge). The Sn layer stacked on the a-Ge layer (100-nm thickness each) had two roles: lowering the crystallization temperature of a-Ge and composing GeSn. Slow annealing at an extremely low temperature of 70 °C allowed for a large-grained (350 nm) GeSn layer with a lattice constant of 0.590 nm, corresponding to a Sn composition exceeding 25%. The present investigation paves the way for advanced electronic optical devices integrated on a flexible plastic substrate as well as on a Si platform.

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Low temperature growth of high crystallinity GeSn on amorphous layers for advanced optoelectronics

Cited by 61 publications

References 30 publications

Mid-infrared integrated photonics on silicon: a perspective

Mid-infrared integrated photonics on silicon: a perspective

High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization

70 °C synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of amorphous Ge

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