Low-temperature growth of high c-orientated crystalline GaN films on amorphous Ni/glass substrates with ECR-PEMOCVD

Zhong, Miao; Qin, Fuwen; Liu, Y.M.; Wang, Qianxi; Bian, Jiming; Wang, E.P.; Wang, Hua; Zhang, Di

doi:10.1016/j.jallcom.2013.08.153

Cited by 17 publications

(20 citation statements)

References 17 publications

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“…2(b) and 2(c)). Finally, it has closely packed hundreds-of-nanometer-sized columnar grains with a randomly twisted in-plane direction ( 21 Note that MOCVD epitaxy on the lattice mismatched substrate (and/or amorphous layer) typically results in random distribution of nucleated three dimensional (3D) bulky GaN, i.e., it is quite difficult to grow a GaN film which covers the whole amorphous surface. 22 To understand the mechanism behind the full surface coverage achieved with the MBE grown GaN layer, we firstly performed the EDX characterization for each samples ( Fig.…”

Section: Growth Evolution Of 1 St Gan On Pa-mbementioning

confidence: 99%

“…10 As a result, it can provide strong N 2 reactivity, forming initial GaN clusters on the amorphous Si 3 N 4 layer. 21 These clusters on the amorphous interface became N-polar GaN seeds on non-Ga 2 O 3 regions, i.e., around Ga 2 O 3 nanoclusters. Then, local coalescence occurs among GaN nucleators since their distances are quite close by < 100 nm.…”

Section: Proposed Growth Model and Further Prospectsmentioning

confidence: 99%

See 1 more Smart Citation

Evolutionary growth of microscale single crystalline GaN on an amorphous layer by the combination of MBE and MOCVD

et al. 2015

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To integrate multiple functional devices on a chip, advances in epitaxial growth on heterosubstances are required. As one approach to achieve an epitaxial layer on an amorphous substrate, we developed a method of combined epitaxial growth using molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). This two-stage combined growth can be used to grow a binary gallium nitride (GaN) on any thermally durable substances. The first MBE growth step provided us effective nucleation with uniform morphology. Meanwhile, the second MOCVD growth enabled improved crystalline quality. Detailed analysis at grain-to-grain and layer-to-layer interfaces was studied with high-resolution transmission electron microscopy (TEM) characterization. This study gives a deep understanding of the growth behavior, thereby supporting the demonstration of perfect single crystalline GaN, enabling the realization of optoelectronic GaN-based devices on amorphous layer.

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Section: Growth Evolution Of 1 St Gan On Pa-mbementioning

confidence: 99%

Section: Proposed Growth Model and Further Prospectsmentioning

confidence: 99%

Evolutionary growth of microscale single crystalline GaN on an amorphous layer by the combination of MBE and MOCVD

et al. 2015

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“…9) Zhong et al also achieved highly c-oriented crystalline GaN films on amorphous substrates with a similar method of Ni deposition. 8) Choi et al was the first to report an LED structure by the application of a Ti pre-orienting layer with a SiO 2 mask layer on micro-sized openings via MOCVD. 10,11) Recently, Shon et al reported a planar LED device on an amorphous SiO 2 substrate with a graphene buffer layer as a pre-orienting layer via sputtering.…”

Section: Introductionmentioning

confidence: 99%

Optical and structural properties of microcrystalline GaN on an amorphous substrate prepared by a combination of molecular beam epitaxy and metal–organic chemical vapor deposition

Min

Hwang

Kang

et al. 2016

Jpn. J. Appl. Phys.

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Microscale platelet-shaped GaN grains were grown on amorphous substrates by a combined epitaxial growth method of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). First, MBE GaN was grown on an amorphous substrate as a pre-orienting layer and its structural properties were investigated. Second, MOCVD grown GaN samples using the different growth techniques of planar and selective area growth (SAG) were comparatively investigated by transmission electron microscopy (TEM), cathodoluminescence (CL), and photoluminescence (PL). In MOCVD planar GaN, strong bound exciton peaks dominated despite the high density of the threading dislocations (TDs). In MOCVD SAG GaN, on the other hand, TDs were clearly reduced with bending, but basal stacking fault (BSF) PL peaks were observed at 3.42 eV. The combined epitaxial method not only provides a deep understanding of the growth behavior but also suggests an alternative approach for the growth of GaN on amorphous substances.

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“…InN, GaN, and InGaN thin films were prepared on glass substrates by the reactive sputtering methods [9]- [11], the reactive evaporation methods [12] [13], the chemical vapor deposition methods [14]- [18], and the molecular beam epitaxy methods [19] [20]. In addition, growths of the nitride semiconductor thin films on polycrystalline substrates such as metal substrates and/or metal thin film deposited glass substrates have been also reported [21]- [24]. The polycrystalline structures of the films grown on the polycrystalline substrates were successfully improved to highly c-axis oriented structures by inserting an amorphous intermediate layer which has enough thickness to isolate the effect of the polycrystalline substrate [22] [25].…”

Section: Introductionmentioning

confidence: 99%

Some Properties of Group-III Nitride Thin Films Directly Grown on Non-Single-Crystalline Substrates by Using a Molecular Beam Epitaxy Apparatus

Sato¹,

Ishizaki²,

Murakami³

et al. 2015

JMP

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Gallium nitride (GaN) and indium-gallium nitride (In x Ga 1−x N) thin films were directly grown on several non-single-crystalline substrates such as quartz glass and amorphous-carbon-coated graphite. The films were grown by using a molecular beam epitaxy apparatus having single or dual nitrogen radio-frequency plasma cells, and in addition, germanium (Ge) or magnesium (Mg) doping to the films was also attempted. Crystallinity, photoluminescence (PL) property, and electrical property of the obtained films were investigated. Highly c-axis oriented GaN and In x Ga 1−x N thin films were obtained on the non-single-crystalline substrates. Near-band-edge emissions were observed in their PL spectra and the intensities were strongly enhanced by Ge doping. Ge doping was also effective on reducing resistivity of the GaN thin films grown on the non-single-crystalline substrates. Electrochemical capacitance-voltage measurements were carried out on the Mg-doped GaN thin films; and p-type conduction in the films was confirmed.

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Low-temperature growth of high c-orientated crystalline GaN films on amorphous Ni/glass substrates with ECR-PEMOCVD

Cited by 17 publications

References 17 publications

Evolutionary growth of microscale single crystalline GaN on an amorphous layer by the combination of MBE and MOCVD

Evolutionary growth of microscale single crystalline GaN on an amorphous layer by the combination of MBE and MOCVD

Optical and structural properties of microcrystalline GaN on an amorphous substrate prepared by a combination of molecular beam epitaxy and metal–organic chemical vapor deposition

Some Properties of Group-III Nitride Thin Films Directly Grown on Non-Single-Crystalline Substrates by Using a Molecular Beam Epitaxy Apparatus

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