Low temperature growth of highly transparent c-axis oriented ZnO thin films by pulsed laser deposition

Amirhaghi, S.; Crăciun, V.; Crǎciun, D.; Elders, J.; Boyd, Ian W.

doi:10.1016/0167-9317(94)90032-9

Cited by 85 publications

(43 citation statements)

References 23 publications

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“…Although lower mobility of adsorbing ZnO due to room temperature deposition might be attributed to the voided layer, no such voiding was observed in PLD grown films at room temperature. X-ray diffraction scans of ZnO films deposited on SiO 2 , Al 2 O 3 , and HfO 2 gate dielectrics exhibited the typical hexagonal wurtzite structure with a preferred (002) orientation, consistent with other studies of PLD ZnO films [31][32][33][34]. PLD and sputtered ZnO scans in Figure 4 show higher quality crystals of PLD films, as indicated by peak width and height.…”

Section: Thin Film Analysissupporting

confidence: 71%

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Self-assembled nanocrystalline ZnO thin film transistor performance optimization for high speed applications

Bayraktaroglu¹,

Leedy²

2014

Turk J Phys

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Abstract:ZnO nanocrystals grown at relatively low temperatures using various vacuum deposition techniques can yield semiconducting thin films of self-assembled nanocolumns 20-50 nm in diameter. Such films are suitable for the fabrication of high speed and transparent thin film transistors (TFTs). Unlike amorphous TFTs, the performance of ZnO transistors depends both on the crystal quality of nanocrystals and the electrical properties of boundary layers between them. We investigated the use of radio frequency sputtering, atomic layer deposition, and pulsed laser deposition techniques to fabricate self-assembled nanocrystalline thin films and determined the influence of deposition conditions on the performance of transistors. Device design and fabrication parameters were also optimized to demonstrate TFTs with high current density and high speed performance comparable to single crystalline-based transistors.

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Section: Thin Film Analysissupporting

confidence: 71%

“…• C, the intensities of the ZnO (002) [36,37]. Sputtered ZnO had an as-deposited RMS roughness of 1.25 nm.…”

Section: Influence Of Growth Temperaturementioning

confidence: 99%

Self-assembled nanocrystalline ZnO thin film transistor performance optimization for high speed applications

Bayraktaroglu¹,

Leedy²

2014

Turk J Phys

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“…This orientation is kinetically favored during the growth of ZnO films, reflecting the fact that the highest density of Zn atoms is found in the [002] plane [26]. This preference for the (002) plane in wurtzite ZnO films is well known and has been reported for films formed by sputtering, pulsed laser deposition and sol-gel methods [12,27,28].…”

Section: Resultsmentioning

confidence: 83%

Simple and cost-effective fabrication of size-tunable zinc oxide architectures by multiple size reduction technique

Park

Zhang

Hwang

et al. 2012

Science and Technology of Advanced Materials

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We present a simple size reduction technique for fabricating 400 nm zinc oxide (ZnO) architectures using a silicon master containing only microscale architectures. In this approach, the overall fabrication, from the master to the molds and the final ZnO architectures, features cost-effective UV photolithography, instead of electron beam lithography or deep-UV photolithography. A photosensitive Zn-containing sol-gel precursor was used to imprint architectures by direct UV-assisted nanoimprint lithography (UV-NIL). The resulting Zn-containing architectures were then converted to ZnO architectures with reduced feature sizes by thermal annealing at 400• C for 1 h. The imprinted and annealed ZnO architectures were also used as new masters for the size reduction technique. ZnO pillars of 400 nm diameter were obtained from a silicon master with pillars of 1000 nm diameter by simply repeating the size reduction technique. The photosensitivity and contrast of the Zn-containing precursor were measured as 6.5 J cm −2 and 16.5, respectively. Interesting complex ZnO patterns, with both microscale pillars and nanoscale holes, were demonstrated by the combination of dose-controlled UV exposure and a two-step UV-NIL.

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“…The deposition temperature is 500°C, and the thickness of Zn film is 800 nm. The use of 248 nm KrF excimer radiation for ZnO ablation was found in previous research to produce films of significantly higher quality than those grown using longer wavelength radiation [21][22][23]. Furthermore, ablation with 248-nm radiation leads to a smooth target surface after ablation [24] and, hence, all targets used here were pre-ablated prior to initial deposition, and not polished between depositions.…”

Section: Methodsmentioning

confidence: 99%

Piezoelectric Size Effects in a Zinc Oxide Micropillar

Qin

et al. 2015

Nanoscale Res Lett

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In this work, the dependence of piezoelectric coefficients (PE) on the size of artificial fabricated ZnO micropillars on Si substrate is investigated. ZnO full film is grown with c-axis orientation and an average grain size of 20 nm at a substrate temperature of 500°C by pulsed laser ablation. The micropillars with the size range of 1.5 to 7 μm are formed by top-down semiconductor device processing. The PE, characterized by piezoelectric force microscopy (PFM), is found to increase from 18.2 to 46.9 pm/V, when the ZnO pillar size is reduced from 7 to 1.5 μm. The strong PE dependence on ZnO pillar size can be explained by local changes in polarization and reduction of unit cell volume with respect to bulk values. These results have strong implications in the field of energy harvesting, as piezoelectric voltage output scales with the piezoelectric coefficient.

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Low temperature growth of highly transparent c-axis oriented ZnO thin films by pulsed laser deposition

Cited by 85 publications

References 23 publications

Self-assembled nanocrystalline ZnO thin film transistor performance optimization for high speed applications

Self-assembled nanocrystalline ZnO thin film transistor performance optimization for high speed applications

Simple and cost-effective fabrication of size-tunable zinc oxide architectures by multiple size reduction technique

Piezoelectric Size Effects in a Zinc Oxide Micropillar

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