Low-temperature growth of highly c-oriented InN films on glass substrates with ECR-PEMOCVD

Zhi, An-Bo; Qin, Fuwen; Zhang, Dong; Bian, Jiming; Yu, Bo; Zhou, Zhi-Feng; Jiang, Xiaotong

doi:10.1016/j.vacuum.2011.10.010

Cited by 7 publications

(4 citation statements)

References 20 publications

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“…Two peaks of 443.3 and 444.5 eV are observed, corresponding to the binding energies of In-In bonds and In-N bonds, respectively. The peak intensity of the In-N bond was significantly higher than that of the In-In bond [36,37]. This demonstrates that there are a large number of In-N bonds in our prepared films, indicating the good crystalline quality.…”

Section: Electrical Properties Of Inn Thin Films Prepared At Varying ...mentioning

confidence: 76%

“…Since the lattice constant of diamond is 0.357 nm and the lattice constant of InN with a-axis is 0.3533 nm, the mismatch of lattice between diamond (111) and InN (0002) is 19.2%. Therefore, compared with traditional plasma-enhanced chemical vapor deposition (PECVD), ECR-PEMOCVD is more suitable for the deposition of this kind of thin film [36][37][38]. In this study, InN thin films on a self-standing diamond substrate were successfully prepared by an electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition [36,37] system and their properties were also studied.…”

Section: Introductionmentioning

confidence: 99%

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Impact of the Deposition Temperature on the Structural and Electrical Properties of InN Films Grown on Self-Standing Diamond Substrates by Low-Temperature ECR-MOCVD

et al. 2020

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The progress of InN semiconductors is still in its infancy compared to GaN-based devices and materials. Herein, InN thin films were grown on self-standing diamond substrates using low-temperature electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) with inert N2 used as a nitrogen source. The thermal conductivity of diamond substrates makes the as-grown InN films especially attractive for various optoelectronic applications. Structural and electrical properties which depend on deposition temperature were systematically investigated by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and Hall effect measurement. The results indicated that the quality and properties of InN films were significantly influenced by the deposition temperature, and InN films with highly c-axis preferential orientation and surface morphology were obtained at optimized temperatures of 400 °C. Moreover, their electrical properties with deposition temperature were studied, and their tendency was correlated with the dependence on micro- structure and morphology.

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Section: Electrical Properties Of Inn Thin Films Prepared At Varying ...mentioning

confidence: 76%

Section: Introductionmentioning

confidence: 99%

Impact of the Deposition Temperature on the Structural and Electrical Properties of InN Films Grown on Self-Standing Diamond Substrates by Low-Temperature ECR-MOCVD

et al. 2020

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“…Remote plasma has been proposed to reduce the ion bombardment in several previous research works. [10][11][12][13][14][15][16] However, remote plasma has continuous decay of metastable species after the well-known short-lived afterglow. 17) In addition, most of the researchers use electron cyclotron resonance (ECR) source, which suffers from the problems of mode hopping and is difficult for large area deposition.…”

Section: Introductionmentioning

confidence: 99%

Modeling and simulation of ion-filtered inductively coupled plasma using argon plasma

Wu¹,

Wang²,

Zhang³

et al. 2015

Jpn. J. Appl. Phys.

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In recent years it has become clear that a nonlinear formulation of test-particle theories has to be preferred over the traditional quasilinear approach. Nonlinear transport theories such as the nonlinear guiding-centre theory or the weakly nonlinear theory are based on certain assumptions which cannot be derived systematically. One of the key inputs into these theories is the velocity correlation function. In the current paper the Taylor-Green-Kubo formulation is used to deduce a general relation between the mean square displacement of the particle, the running diffusion coefficient and the velocity correlation function. This relation can be used to extract velocity correlation function from test-particle simulations and from transport theories. The latter possibility is the subject of the current paper. These results, which are essential for the improvement of nonlinear transport theories, are compared with standard models applied previously. An additional result of this paper is that for realistic wave spectra, perpendicular diffusion is recovered even within the magnetostatic slab model.

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“…[1][2][3][4][5][6][7] A possible way of increasing the growth rate is associated with the plasmaactivated nitrogen filling the growth zone. [8][9][10][11][12][13][14][15] We report the results of the first experiments on the growth of indium nitride films by electron cyclotron resonance plasma-enhanced MOCVD (ECR-PEMOCVD). ECR discharge sustained by the radiation of a technological gyrotron with a frequency of 24 GHz and power up to 5 kW was used to provide active nitrogen flow.…”

Section: Introductionmentioning

confidence: 99%

Indium Nitride Film Growth by Metal Organic Chemical Vapor Deposition with Nitrogen Activation in Electron Cyclotron Resonance Discharge Sustained by 24 GHz Gyrotron Radiation

Vodopyanov

Mansfeld

Buzynin

et al. 2013

Jpn. J. Appl. Phys.

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We report the results of the first experiments on the growth of indium nitride films by electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition. Discharge sustained by the radiation of a technological gyrotron with a frequency of 24 GHz and power up to 5 kW was used to provide active nitrogen flow. The use of higher frequency microwave radiation for plasma heating provides a higher plasma density, and more active nitrogen flow. Mirror-smooth homogeneous hexagonal InN films were grown on ittria-stabilized zirconia and sapphire substrates. It was shown that single-crystal InN films can be grown on Al2O3 (0001) substrates if a double buffer layer of InN/GaN is used. The growth rate of 1 µm/h was demonstrated in this case. Film properties are studied by optical and electron microscopies, secondary ion mass spectroscopy, X-ray diffraction, and photoluminescence.

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Low-temperature growth of highly c-oriented InN films on glass substrates with ECR-PEMOCVD

Cited by 7 publications

References 20 publications

Impact of the Deposition Temperature on the Structural and Electrical Properties of InN Films Grown on Self-Standing Diamond Substrates by Low-Temperature ECR-MOCVD

Impact of the Deposition Temperature on the Structural and Electrical Properties of InN Films Grown on Self-Standing Diamond Substrates by Low-Temperature ECR-MOCVD

Modeling and simulation of ion-filtered inductively coupled plasma using argon plasma

Indium Nitride Film Growth by Metal Organic Chemical Vapor Deposition with Nitrogen Activation in Electron Cyclotron Resonance Discharge Sustained by 24 GHz Gyrotron Radiation

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