Low-Temperature Growth of InAs on Glass and Plastic Film Substrates by Molecular-Beam Deposition

Abstract

InAs layers were deposited on glass substrates by molecular-beam deposition at substrate temperatures of 180 -240 C at As/ In beam equivalent pressure (BEP) ratios of 3 -30. X-ray diffraction (XRD) patterns indicated that the InAs layers are polycrystalline and are more preferentially textured in the (111) plane when deposited at higher temperatures and lower As/In BEP ratios. Room-temperature Hall effect measurement showed that the films deposited at an As/In BEP ratio of 30 exhibit n-type conduction with electron concentrations of approximately 3 Â 10 18 cm À3 , being almost independent of substrate temperature. With decreasing As/In BEP ratio from 30 to 3 at a fixed substrate temperature of 240 C, the electron concentration decreased to 1:5 Â 10 18 cm À3 and the electron mobility increased to 610 cm 2 /(VÁs). Preliminary results of the deposition on plastic substrates showed an electron mobility of 460 cm 2 /(VÁs) when the layer was deposited at 280 C at an As/In BEP ratio of 30.

Low-temperature grown MnAs/InAs/MnAs double heterostructure on GaAs (111)B by molecular beam epitaxy

“…27) The carrier concentration of all the samples is quite high. It is suggested that 25) the electron concentration of LT grown InAs layers are predominated by antisite As concentrations. At low growth temperature with excess As, it is relatively easier to replace In atom from the lattice and replace it with an As atom which then can act as a double donor, 28) increasing the n-type carrier concentration.…”

“…The promotion of smooth surface growth and preservation of an adequate rate of growth can both be accomplished by changing the V/III ratio within the ideal range. There is a few reports of MnAs growth on InAs, 24) LT growth of InAs on glass/plastic substrate 25) and MnAs/InAs/MnAs thin trilayer on GaAs(111)B, 26) but to the best of our knowledge, no papers have been published that specifically investigate MnAs/InAs/MnAs thick double heterostructure on GaAs(111)B for the purpose of vertical spin-FET application. This underscores the novelty and significance of the present study, as it seeks to contribute valuable insights and fill this critical void in scientific literature.…”

High-electron-mobility InAs thin layers down to ~ 100 nm obtained by epitaxial lift-off and normal/inverted van der Waals bonding on flexible substrates

“…Although III-V semiconductors as device active layers have excellent electronic properties, such as high electron mobilities and velocities, deposition of high-quality III-V semiconductor thin layers on FS's is problematic due to the difficulties. In fact, an InAs layer of ∼ 1 µm thickness on FS's, which is low-temperature deposited and polycrystalline, exhibits electron mobility of ∼ 500 cm 2 /V-s [1]; this mobility, while being higher than those of the polycrystalline Si layers, is far lower than those of crystalline InAs layers. In order to realize high-quality III-V semiconductor thin layers on FS's, bonding method is promising because it does not involve the difficulties of the temperature limitation and the noncrystallinity of FS's.…”